SOI MOSFET

Results: 14



#Item
1F r a u n h o f e r I n s t i t u t e f o r Mic r o e l e c t r o n ic C i r c u i t s a n d S y s t e m s  Programme Inter Carnot Fraunhofer HOTMOS High temperature SOI CMOS technology platform for applications up to 25

F r a u n h o f e r I n s t i t u t e f o r Mic r o e l e c t r o n ic C i r c u i t s a n d S y s t e m s Programme Inter Carnot Fraunhofer HOTMOS High temperature SOI CMOS technology platform for applications up to 25

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Source URL: www.ims.fraunhofer.de

Language: English - Date: 2016-08-18 14:30:09
2Leti_NR_UTSOI2_FINAL_11 03 15

Leti_NR_UTSOI2_FINAL_11 03 15

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Source URL: www-leti.cea.fr

Language: English - Date: 2015-04-09 08:55:05
3Comprehensive Simulation Study of Statistical Variability in 32nm SOI MOSFET N. M. Idris1, B. Cheng1, A. R. Brown1, S. Markov1, and A. Asenov1,2 School of Engineering, University Of Glasgow, Glasgow, G12 8LT, Scotland, U

Comprehensive Simulation Study of Statistical Variability in 32nm SOI MOSFET N. M. Idris1, B. Cheng1, A. R. Brown1, S. Markov1, and A. Asenov1,2 School of Engineering, University Of Glasgow, Glasgow, G12 8LT, Scotland, U

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Source URL: userweb.eng.gla.ac.uk

Language: English - Date: 2010-12-10 06:55:44
    4Leti_NR_UTSOI2_FINAL_11 03 15

    Leti_NR_UTSOI2_FINAL_11 03 15

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    Source URL: www.leti.fr

    Language: English - Date: 2015-04-09 08:55:05
    5Microsoft PowerPoint - HC18.310.S3T1.Z-RAM Ultra-dense Memory for 90nm and Below.V4.ppt

    Microsoft PowerPoint - HC18.310.S3T1.Z-RAM Ultra-dense Memory for 90nm and Below.V4.ppt

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    Source URL: www.hotchips.org

    Language: English - Date: 2013-07-27 23:52:00
    6Self-Consistent Thermal Electron-Phonon Simulator for SOI Devices S. M. Goodnick*, K. Raleva** and D. Vasileska* * Arizona State University, Tempe, AZ[removed], USA **

    Self-Consistent Thermal Electron-Phonon Simulator for SOI Devices S. M. Goodnick*, K. Raleva** and D. Vasileska* * Arizona State University, Tempe, AZ[removed], USA **

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    Source URL: www.nsti.org

    Language: English - Date: 2013-11-18 16:26:03
    7A computationally efficient method for analytical calculation of potentials in undoped symmetric DG SOI MOSFET Oana Cobianu * and Manfred Glesner** Institute of Microelectronic Systems, Darmstadt University of Technology

    A computationally efficient method for analytical calculation of potentials in undoped symmetric DG SOI MOSFET Oana Cobianu * and Manfred Glesner** Institute of Microelectronic Systems, Darmstadt University of Technology

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    Source URL: www.nsti.org

    Language: English - Date: 2012-06-27 17:11:59
    81  Analytical Results for the I-V Characteristics of a Fully Depleted SOI-MOSFET H. Morris, E. Cumberbatch, V. Tyree, H. Abebe Abstract: Explicit formulae for the I-V characteristics of an SOI/SOS MOSFET operating in the

    1 Analytical Results for the I-V Characteristics of a Fully Depleted SOI-MOSFET H. Morris, E. Cumberbatch, V. Tyree, H. Abebe Abstract: Explicit formulae for the I-V characteristics of an SOI/SOS MOSFET operating in the

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    Source URL: www.cgu.edu

    Language: English - Date: 2006-06-15 18:19:28
    9A Unified Process-Based Compact Model for Scaled PD/SOI and Bulk-Si MOSFETs Jerry G. Fossum University of Florida Gainesville, FL[removed]http://www.soi.tec.ufl.edu)

    A Unified Process-Based Compact Model for Scaled PD/SOI and Bulk-Si MOSFETs Jerry G. Fossum University of Florida Gainesville, FL[removed]http://www.soi.tec.ufl.edu)

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    Source URL: www.nsti.org

    Language: English - Date: 2010-03-19 15:18:44
    10Present Status and Future Direction of BSIM SOI Model for High Performance/Low-Power/RF Application Samuel K. H. Fung, *Pin Su, *Wan Hui, *Chenming Hu IBM Microelectronics, Semiconductor Research and Development Center (

    Present Status and Future Direction of BSIM SOI Model for High Performance/Low-Power/RF Application Samuel K. H. Fung, *Pin Su, *Wan Hui, *Chenming Hu IBM Microelectronics, Semiconductor Research and Development Center (

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    Source URL: www.nsti.org

    Language: English - Date: 2010-03-19 15:20:38