Gallium nitride

Results: 448



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16  Publishable Summary OSIRIS project, a Research and Innovation Action (RIA), aims at improving substantially the cost effectiveness and performance of gallium nitride (GaN) based millimetre wave components. The project

6 Publishable Summary OSIRIS project, a Research and Innovation Action (RIA), aims at improving substantially the cost effectiveness and performance of gallium nitride (GaN) based millimetre wave components. The project

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Source URL: artemis-ia.eu

Language: English
    2EAS™ eGaNAMP2016 Product Brief Class-D High-Performance eGaN FET Amplifier Module Gallium Nitride Complete Class-D Amplifier Solution •

    EAS™ eGaNAMP2016 Product Brief Class-D High-Performance eGaN FET Amplifier Module Gallium Nitride Complete Class-D Amplifier Solution •

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    Source URL: epc-co.com

    Language: English - Date: 2016-03-07 17:50:46
      3Materials for stretchable electronics in bioinspired and biointegrated devices Dae-Hyeong Kim, Nanshu Lu, Yonggang Huang, and John A. Rogers Inorganic semiconductors such as silicon, gallium arsenide, and gallium nitride

      Materials for stretchable electronics in bioinspired and biointegrated devices Dae-Hyeong Kim, Nanshu Lu, Yonggang Huang, and John A. Rogers Inorganic semiconductors such as silicon, gallium arsenide, and gallium nitride

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      Source URL: rogers.matse.illinois.edu

      - Date: 2012-03-18 07:56:02
        4Unusual strategies for using indium gallium nitride grown on siliconfor solid-state lighting Hoon-sik Kima,1, Eric Bruecknerb,1, Jizhou Songc,1, Yuhang Lid,e, Seok Kima, Chaofeng Lud,f, Joshua Sulking, Kent Choqu

        Unusual strategies for using indium gallium nitride grown on siliconfor solid-state lighting Hoon-sik Kima,1, Eric Bruecknerb,1, Jizhou Songc,1, Yuhang Lid,e, Seok Kima, Chaofeng Lud,f, Joshua Sulking, Kent Choqu

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        Source URL: rogers.matse.illinois.edu

        - Date: 2011-06-30 18:11:42
          5Electronic Devices on Various Substrates: Fabrication of Releasable SingleCrystal SiliconMetal Oxide FieldEffect Devices and Their Deterministic Assembly on Foreign Substrates (Adv. Funct. Mater)

          Electronic Devices on Various Substrates: Fabrication of Releasable SingleCrystal SiliconMetal Oxide FieldEffect Devices and Their Deterministic Assembly on Foreign Substrates (Adv. Funct. Mater)

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          Source URL: rogers.matse.illinois.edu

          Language: English - Date: 2011-08-11 13:58:07
          6DM-X300-01- 300W X-Band v.1 - April 2016

          DM-X300-01- 300W X-Band v.1 - April 2016

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          Source URL: www.diamondmw.com

          Language: English - Date: 2016-05-20 09:51:20
          7Cambridge  materialeyes Summer 2012 Issue 23  Gallium nitride LEDs go commercial

          Cambridge materialeyes Summer 2012 Issue 23 Gallium nitride LEDs go commercial

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          Source URL: www.msm.cam.ac.uk

          Language: English - Date: 2012-07-17 07:11:17
          8http://blogs.nature.com/news/thegreatbeyondstudy_promi

          http://blogs.nature.com/news/thegreatbeyondstudy_promi

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          Source URL: rogers.matse.illinois.edu

          Language: English - Date: 2009-08-30 05:18:32
          9Improvement of Crystalline Quality and Light Extraction Efficiency in GaN-Based Light-Emitting Diodes by Nanoimprint Lithography 學生:陳政勤 學號:

          Improvement of Crystalline Quality and Light Extraction Efficiency in GaN-Based Light-Emitting Diodes by Nanoimprint Lithography 學生:陳政勤 學號:

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          Source URL: diamondprj.nctu.edu.tw

          Language: English - Date: 2013-09-25 03:31:47
          10Drain	Voltage	and	Avalanche	Ratings	 for	GaN	FETs Jason	Cuadra	 Application	Note	AN-0008	 Rev.	2.0.2

          Drain Voltage and Avalanche Ratings for GaN FETs Jason Cuadra Application Note AN-0008 Rev. 2.0.2

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          Source URL: www.transphormusa.com

          Language: English - Date: 2016-08-11 14:28:59