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Bipolar junction transistor
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1	2N3904 / MMBT3904 / PZT3904 NPN General-Purpose Amplifier Description This device is designed as a general-purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifi Add to Reading List Source URL: www.fairchildsemi.com Language: English - Date: 2016-08-23 09:31:56 Bipolar transistors Electrical engineering Electronic engineering Electromagnetism Transistor Bipolar junction transistor 2N3904 TO-92 2N2222 BC548
2	4N35-X, 4N36-X, 4N37-X, 4N38 www.vishay.com Vishay Semiconductors Optocoupler, Phototransistor Output, with Base Connection Add to Reading List Source URL: www.arduino.cc Language: English - Date: 2015-07-21 12:16:07 Electromagnetism Electrical engineering Electronic engineering Semiconductor devices Electronic design Vishay Intertechnology Bipolar junction transistor Opto-isolator VCE Transistor Surface-mount technology
3	የአዲስ አበባ ከተማ አስተዳደር አዲስ ነጋሪ ጋዜጣ ADDIS NEGARI GAZETA OF THE CITY GOVERNMENT OF ADDIS ABABA አራተኛ ዓመት ቁጥር  Add to Reading List Source URL: www.aacc.gov.et Language: English - Date: 2015-02-25 01:35:33 Addis Ababa Addis Bipolar junction transistor African Union Structure
4	የ አዲስ አበባ ከተማ አስተዳደር አዲስ ነ ጋሪ ጋዜጣ ADDIS NEGARI GAZETA OF THE CITY GOVERNMENT OF ADDIS ABABA አራተኛ ዓመት ቁጥር ፴፬ Add to Reading List Source URL: www.aacc.gov.et Language: English - Date: 2013-09-11 12:08:15 Addis Ababa Addis Bipolar junction transistor
5	TRANSISTORS Transistor – a three-terminal device for which the voltage or current at one terminal controls the electrical behavior of the other terminals. Bipolar Junction Transistor (BJT) – a three-terminal device f Add to Reading List Source URL: ece.mst.edu Language: English - Date: 2012-09-05 05:02:32 Single-stage transistor amplifiers Semiconductor devices Bipolar junction transistor Common emitter Transistor Common base Transistor diode model Avalanche transistor
6	Ordering number : ENN6912 2SA2039 / 2SC5706 PNP / NPN Epitaxial Planar Silicon Transistors 2SA2039 / 2SC5706 Add to Reading List Source URL: www.kitsandparts.com Language: English - Date: 2016-04-02 12:44:31 Semiconductor devices Bipolar junction transistor Transistor VCE Logic families Integrated circuits Electronic engineering
7	A CRITICAL ANALYSIS OF IGBT GEOMETRIES, WITH THE INTENTION OF MITIGATING UNDESIRABLE DESTRUCTION CAUSED BY FAULT SCENARIOS OF AN ADVERSE NATURE G. E. Leyh, SLAC, Menlo Park CAAbstract Megawa Add to Reading List Source URL: www-group.slac.stanford.edu Language: English - Date: 2003-05-07 14:01:39 Power electronics Semiconductor devices Insulated-gate bipolar transistor Transistor Bipolar junction transistor
8	EE 121 Watkins FINAL REVIEW © 2011 Add to Reading List Source URL: ece.mst.edu Language: English - Date: 2012-09-05 05:02:22 Diodes Pn junction Diode Bipolar junction transistor Photodiode Operational amplifier Transistor PIN diode MOSFET JFET Field-effect transistor Load line
9	TIP120 / TIP121 / TIP122 NPN Epitaxial Darlington Transistor Equivalent Circuit C Features Add to Reading List Source URL: www.fairchildsemi.com Language: English - Date: 2016-08-19 01:16:25 Bipolar transistors Transistors Electronic engineering Bipolar junction transistor Darlington transistor Fairchild Semiconductor Safe operating area 2N2222 BC548
10	Semiconductor Example Consider a Si crystal which is doped with 1012 phosphorous (P) atoms/cm3 and with 1013 aluminum (Al) atoms/cm3. Assume all of the dopants are ionized and that the semiconductor is at room temperatur Add to Reading List Source URL: ece.mst.edu Language: English - Date: 2012-09-05 05:02:22 Diodes Analog circuits Semiconductor devices Diode Currentvoltage characteristic Transistor Bipolar junction transistor Diode logic Diode modelling