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Transistor
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#	Item
141	TPH3205WS PRODUCT SUMMARY (TYPICAL) VDS (V) 600 Add to Reading List Source URL: www.transphormusa.com Language: English - Date: 2016-08-11 14:27:57 Power electronics Electric power conversion Voltage regulation Electronic engineering Safe operating area MOSFET Field-effect transistor Diode Switched-mode power supply
142	EN Horizon 2020 Work ProgrammeFuture and Emerging Technologies Add to Reading List Source URL: ec.europa.eu Language: English - Date: 2016-07-25 04:42:04 Technology forecasting Framework Programmes for Research and Technological Development Responsible Research and Innovation Emerging technologies Innovation Field-effect transistor Fet Futures studies
143	TPH3202LD PRODUCT SUMMARY (TYPICAL) VDS (V) 600 Add to Reading List Source URL: www.transphormusa.com Language: English - Date: 2016-08-11 14:27:46 Power electronics Electronic engineering Safe operating area MOSFET Field-effect transistor Diode
144	「維基夥伴獎學金」獎助生成果報告書簡報檔 Backside Via Hole and Flip-Chip Packaging of GaAs MMICs for W-Band Applications Adviser：Prof. Edward Yi Chang Add to Reading List Source URL: diamondprj.nctu.edu.tw Language: English - Date: 2015-08-26 02:29:40 Semiconductor device fabrication Semiconductor devices Integrated circuits Monolithic microwave integrated circuit Packaging Reliability Integrated circuit packaging Integrated circuit Flip chip Gallium arsenide Transistor
145	pubs.acs.org/NanoLett Dependence of Carrier Mobility on Nanocrystal Size and Ligand Length in PbSe Nanocrystal Solids Yao Liu,† Markelle Gibbs,† James Puthussery,† Steven Gaik,‡ Rachelle Ihly,† Add to Reading List Source URL: cfse.ps.uci.edu Language: English - Date: 2011-11-02 16:52:51 Condensed matter physics Spintronics Charge carriers Transistors Electron mobility Semiconductors Mobilities Superlattice Electron Field-effect transistor Lead selenide Exciton
146	CleO- RIO Module Datasheet Version 1.0 D oc ument Reference N o.: FT _001310 C learance N o.: FT DI#495 Add to Reading List Source URL: www.ftdichip.com Language: English - Date: 2016-06-15 05:12:34 Integrated circuits FTDI CLEO Pinout Serial Peripheral Interface Bus Transistor Surface-mount technology ICE
147	CORSO DI LAUREA MAGISTRALE IN FISICA A SINGLE PHOTON TRANSISTOR REALIZED BY A THREE-LEVEL LADDER ATOM IN A CAVITY Relatore Esterno: Prof. A. S. Sørensen Add to Reading List Source URL: theoretical-quantum-optics.nbi.ku.dk Language: English - Date: 2015-09-01 10:35:00 Cavity quantum electrodynamics Quantum information science Spontaneous emission
148	Semiconductor Example Consider a Si crystal which is doped with 1012 phosphorous (P) atoms/cm3 and with 1013 aluminum (Al) atoms/cm3. Assume all of the dopants are ionized and that the semiconductor is at room temperatur Add to Reading List Source URL: ece.mst.edu Language: English - Date: 2012-09-05 05:02:22 Diodes Analog circuits Semiconductor devices Diode Currentvoltage characteristic Transistor Bipolar junction transistor Diode logic Diode modelling
149	Ion-Sensitive Features Applications Add to Reading List Source URL: www.ipms.fraunhofer.de Language: English - Date: 2016-04-14 08:53:24 Electrodes Sensors Electrochemistry Measuring instruments ISFET Field-effect transistor PH MOSFET Transistor
150	Solution-processed single-walled carbon nanotube field effect transistors and bootstrapped inverters for disintegratable, transient electronics Sung Hun Jin, Jongmin Shin, In-Tak Cho, Sang Youn Han, Dong Joon Lee, Chi Hw Add to Reading List Source URL: rogers.matse.illinois.edu Language: English - Date: 2014-07-17 07:14:19 Carbon nanotubes Emerging technologies Space elevator Gallium nitride Transistor Field-effect transistor Power inverter

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