Electron mobility

Results: 164



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1Veena Misra Professor of Electrical and Computer Engineering North Carolina State University Optimizing Performance and Reliability of GaN MOSFET Devices Owing to a high critical electric field and high electron mobility

Veena Misra Professor of Electrical and Computer Engineering North Carolina State University Optimizing Performance and Reliability of GaN MOSFET Devices Owing to a high critical electric field and high electron mobility

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Source URL: www.apec-conf.org

Language: English - Date: 2016-08-22 14:30:22
    2Letter pubs.acs.org/JPCL Cite This: J. Phys. Chem. Lett. 2017, 8, High Hole-Mobility Molecular Layer Made from Strong Electron

    Letter pubs.acs.org/JPCL Cite This: J. Phys. Chem. Lett. 2017, 8, High Hole-Mobility Molecular Layer Made from Strong Electron

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    Source URL: www.uvsor.ims.ac.jp

    Language: English - Date: 2017-11-12 22:01:33
      3InAs-core Composite Channel Metal Oxide Semiconductor-High Electron Mobility Transistors : Fabrication and Characterization Wei-Hsiang Yu (尤韋翔)

      InAs-core Composite Channel Metal Oxide Semiconductor-High Electron Mobility Transistors : Fabrication and Characterization Wei-Hsiang Yu (尤韋翔)

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      Source URL: diamondprj.nctu.edu.tw

      - Date: 2013-09-25 03:31:52
        4VOLUME 93, N UMBER 8 PHYSICA L R EVIEW LET T ERS week ending 20 AUGUST 2004

        VOLUME 93, N UMBER 8 PHYSICA L R EVIEW LET T ERS week ending 20 AUGUST 2004

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        Source URL: rogers.matse.illinois.edu

        Language: English - Date: 2004-09-14 20:39:00
        5

        PDF Document

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        Source URL: f1duj.free.fr

        Language: English - Date: 2005-04-28 17:39:27
        6PHYSICAL REVIEW B 93, Demonstration of gate control of spin splitting in a high-mobility InAs/AlSb two-dimensional electron gas B. Shojaei,1 P. J. J. O’Malley,2 J. Shabani,3 P. Roushan,2 B. D. Schultz,4

        PHYSICAL REVIEW B 93, Demonstration of gate control of spin splitting in a high-mobility InAs/AlSb two-dimensional electron gas B. Shojaei,1 P. J. J. O’Malley,2 J. Shabani,3 P. Roushan,2 B. D. Schultz,4

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        Source URL: web.physics.ucsb.edu

        Language: English - Date: 2016-03-02 17:23:43
        7TDPS251E0D2 Application Note: TDPS251E0D2 LLC DC/DC Converter Evaluation Board 1. Introduction The Evaluation Board for an LLC circuit using GaN HEMTs is described in this paper. In this

        TDPS251E0D2 Application Note: TDPS251E0D2 LLC DC/DC Converter Evaluation Board 1. Introduction The Evaluation Board for an LLC circuit using GaN HEMTs is described in this paper. In this

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        Source URL: www.transphormusa.com

        Language: English - Date: 2016-08-11 14:26:47
        8Paper Title (use style: paper title)

        Paper Title (use style: paper title)

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        Source URL: www.merl.com

        Language: English - Date: 2016-07-29 10:26:03
        9Industry-Academia Workshop on GaN Technology August 9, 10: 00 – 16:00, Technion Zisapel Nanoelectonics Building, seminar room 4th floor. Program 10:00 Opening Remarks, Dan Ritter, Technion, David Rosenfeld, IMOD

        Industry-Academia Workshop on GaN Technology August 9, 10: 00 – 16:00, Technion Zisapel Nanoelectonics Building, seminar room 4th floor. Program 10:00 Opening Remarks, Dan Ritter, Technion, David Rosenfeld, IMOD

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        Source URL: webee.technion.ac.il

        Language: English - Date: 2016-07-25 07:39:37
        10Microsoft Word - Electronic Properies of Materials.doc

        Microsoft Word - Electronic Properies of Materials.doc

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        Source URL: www.amiestudycircle.com

        Language: English - Date: 2015-11-17 02:26:51