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Transistor
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#	Item
591	Tohoku University 66th Nano-Spin Engineering Workshop －Terahertz Graphene DevicesDate&Time: 15:00－18:00, March 14th, 2013 (Thu.) Venue: Room A508, Nano-Spin Laboratory Building, 5F RIEC, Tohoku University, Katahira C Add to Reading List Source URL: www.riec.tohoku.ac.jp Language: English - Date: 2013-03-06 19:55:52 Nanomaterials Graphene Materials science Transistor Nanoelectronics Physics Chemistry Emerging technologies
592	OPERATING INSTRUCTIONS AND SPECIFICATIONS NI[removed]Channel, TTL Digital Input/Output Module Français Add to Reading List Source URL: www.sal.wisc.edu Language: English - Date: 2010-01-13 12:55:46 Transistor–transistor logic Power supply
593	CS_ad_213x282mm_semiconductor_today_feb14.indd Add to Reading List Source URL: www.semiconductor-today.com Language: English - Date: 2015-02-27 10:59:45 Nitrides Transistor Thin film deposition High electron mobility transistor Light-emitting diode Silicon carbide Epitaxy Lau Wai Shing Chemistry Semiconductor devices Gallium nitride
594	CS_ad_213x282mm_semiconductor_today_feb14.indd Add to Reading List Source URL: www.semiconductor-today.com Language: English - Date: 2015-04-08 17:14:33 Superhard materials Semiconductor device fabrication Materials science Transistor Gallium nitride High electron mobility transistor Silicon carbide Ohmic contact Titanium nitride Chemistry Nitrides Semiconductor devices
595	CS_ad_213x282mm_semiconductor_today_feb14.indd Add to Reading List Source URL: www.semiconductor-today.com Language: English - Date: 2015-04-08 17:14:26 Power electronics Semiconductor devices Gallium nitride Nitrides Insulated gate bipolar transistor Power semiconductor device MOSFET Transistor Silicon carbide Chemistry Electrical engineering Electromagnetism
596	CS_ad_213x282mm_semiconductor_today_feb14.indd Add to Reading List Source URL: www.semiconductor-today.com Language: English - Date: 2015-02-27 10:59:53 Indium gallium nitride 2DEG Indium nitride Heterojunction Electron mobility High electron mobility transistor Metalorganic vapour phase epitaxy Transistor Aluminium gallium nitride Chemistry Nitrides Gallium nitride
597	CS_ad_213x282mm_semiconductor_today_feb14.indd Add to Reading List Source URL: www.semiconductor-today.com Language: English - Date: 2015-01-23 09:11:01 Semiconductor device fabrication Nitrides Semiconductor devices Silicon carbide Gallium nitride Light-emitting diode Polymorphs of silicon carbide Transistor Microelectromechanical systems Chemistry Superhard materials Carbides
598	86 Technology focus: GaN HEMTs First application of low-cost deposition of titanium dioxide for GaN MOS-HEMT Ultrasonic spray pyrolysis deposition has been used to create devices Add to Reading List Source URL: www.semiconductor-today.com Language: English - Date: 2015-01-23 09:10:57 Semiconductor devices Transistor High electron mobility transistor High-k dielectric Gallium nitride Aluminium gallium nitride Transconductance Chemistry Electronics Nitrides
599	The next stage in power semiconductors LESLIE LANGNAU, Associate Editor Recent design innovations have resulted in a new power semiconductor that can switch with the speed of an Insulated Gate Bipolar Transistor and cond Add to Reading List Source URL: fab.cba.mit.edu Language: English - Date: 2010-09-15 01:34:30 Electronics Integrated gate-commutated thyristor Thyristor Gate turn-off thyristor Power semiconductor device Insulated gate bipolar transistor Transistor Field-effect transistor MOSFET Electrical engineering Electromagnetism Power electronics
600	Press Release IC manufacturer purchases three nProber IITM systems for sub-14nm electrical fault characterization FREMONT, Calif., April 22, 2014 Today DCG Systems, Inc. announced the purchase of three nProber IITM nano Add to Reading List Source URL: dcgsystems.com Language: English - Date: 2014-10-23 00:14:34 Semiconductor devices Transistor Electrical engineering

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