Epitaxy

Results: 265



#Item
1Solid phase epitaxy of ultra-shallow Sn implanted Si observed using highresolution Rutherford backscattering spectrometry T. K. Chan, F. Fang, A. Markwitz, and T. Osipowicz Citation: Appl. Phys. Lett. 101, );

Solid phase epitaxy of ultra-shallow Sn implanted Si observed using highresolution Rutherford backscattering spectrometry T. K. Chan, F. Fang, A. Markwitz, and T. Osipowicz Citation: Appl. Phys. Lett. 101, );

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Source URL: www.ciba.nus.edu.sg

Language: English - Date: 2013-02-01 05:11:43
    2Nickel enhanced graphene growth directly on dielectric substrates by molecular beam epitaxy Nickel enhanced graphene growth directly on dielectric substrates by molecular beam epitaxy

    Nickel enhanced graphene growth directly on dielectric substrates by molecular beam epitaxy Nickel enhanced graphene growth directly on dielectric substrates by molecular beam epitaxy

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    Source URL: www.pdi-berlin.de

    - Date: 2016-08-01 18:15:09
      3Cambridge materialeyes Summer 2012 Issue 23 Gallium nitride LEDs go commercial

      Cambridge materialeyes Summer 2012 Issue 23 Gallium nitride LEDs go commercial

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      Source URL: www.msm.cam.ac.uk

      Language: English - Date: 2012-07-17 07:11:17
      4Structure and tunnel magnetoresistance in Fe/MgF2/Co junctions With an oxide seed layer on an Fe bottom electrode S. Mitani,a) T.Moriyama, and K.Takanashi Institute for Mterials Research, Tohoku University, Sendai

      Structure and tunnel magnetoresistance in Fe/MgF2/Co junctions With an oxide seed layer on an Fe bottom electrode S. Mitani,a) T.Moriyama, and K.Takanashi Institute for Mterials Research, Tohoku University, Sendai

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      Source URL: www.1974eiko.co.jp

      Language: English - Date: 2009-05-08 06:42:44
      5F R A U N H O F E R I N S T I T U T E F O R I N T E G R AT E D S Y S T E M S A N D D E V I C E T E C H N O L O G Y I I S B CRYSTALLINE MATERIALS FOR ELECTRONIC AND ENERGY SYSTEMS CONTACT

      F R A U N H O F E R I N S T I T U T E F O R I N T E G R AT E D S Y S T E M S A N D D E V I C E T E C H N O L O G Y I I S B CRYSTALLINE MATERIALS FOR ELECTRONIC AND ENERGY SYSTEMS CONTACT

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      Source URL: www.iisb.fraunhofer.de

      Language: English - Date: 2016-06-08 05:11:47
      6Brochure-ENHANCE-Winter School_ Final

      Brochure-ENHANCE-Winter School_ Final

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      Source URL: www.enhance-itn.eu

      Language: English - Date: 2012-01-06 13:06:05
      7SUPPLEMENTARY INFORMATION doi:nature14417 SUPPLEMENTARY METHODS MOCVD growth of ML MoS2 and WS2 films. As illustrated in Fig. 2a, the synthesis of ML

      SUPPLEMENTARY INFORMATION doi:nature14417 SUPPLEMENTARY METHODS MOCVD growth of ML MoS2 and WS2 films. As illustrated in Fig. 2a, the synthesis of ML

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      Source URL: park.chem.cornell.edu

      Language: English - Date: 2015-05-17 22:51:54
      8Journal of Undergraduate Research 6, Analysis of Ferromagnetic-Multiferroic Interfaces in Epitaxial Multilayers of La0.7 Sr0.3 MnO3 and BiFeO3 P. Knapp Department of Mechanical Engineering, Northwestern Uni

      Journal of Undergraduate Research 6, Analysis of Ferromagnetic-Multiferroic Interfaces in Epitaxial Multilayers of La0.7 Sr0.3 MnO3 and BiFeO3 P. Knapp Department of Mechanical Engineering, Northwestern Uni

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      Source URL: jur.phy.uic.edu

      Language: English - Date: 2013-04-17 12:16:50
      921st American Conference on Crystal Growth and Epitaxy (ACCGE-21) and 18th US Workshop on Organometallic Vapor Phase Epitaxy (OMVPE-18) to be held in Santa Fe, New Mexico, USA

      21st American Conference on Crystal Growth and Epitaxy (ACCGE-21) and 18th US Workshop on Organometallic Vapor Phase Epitaxy (OMVPE-18) to be held in Santa Fe, New Mexico, USA

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      Source URL: www.crystalgrowth.org

      - Date: 2016-06-07 14:58:58
        10High Mobility HEMT Growth with Water-cooling MBE System T.Takamatsu, S.Takagi and G.Kido National Reserch Institute for Metals 3-13 Sakura, Tsukuba, Ibaraki, Japan High mobility GaAs / AlGaAs HEMT structures wer

        High Mobility HEMT Growth with Water-cooling MBE System T.Takamatsu, S.Takagi and G.Kido National Reserch Institute for Metals 3-13 Sakura, Tsukuba, Ibaraki, Japan High mobility GaAs / AlGaAs HEMT structures wer

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        Source URL: www.1974eiko.co.jp

        Language: English - Date: 2009-05-08 06:40:08