Indium nitride

Results: 102



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1Unusual strategies for using indium gallium nitride grown on siliconfor solid-state lighting Hoon-sik Kima,1, Eric Bruecknerb,1, Jizhou Songc,1, Yuhang Lid,e, Seok Kima, Chaofeng Lud,f, Joshua Sulking, Kent Choqu

Unusual strategies for using indium gallium nitride grown on siliconfor solid-state lighting Hoon-sik Kima,1, Eric Bruecknerb,1, Jizhou Songc,1, Yuhang Lid,e, Seok Kima, Chaofeng Lud,f, Joshua Sulking, Kent Choqu

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Source URL: rogers.matse.illinois.edu

- Date: 2011-06-30 18:11:42
    2Paper Title (use style: paper title)

    Paper Title (use style: paper title)

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    Source URL: www.merl.com

    Language: English - Date: 2016-07-29 10:26:03
    3SUPPLEMENTARY INFORMATION  doi:nature14417 SUPPLEMENTARY METHODS MOCVD growth of ML MoS2 and WS2 films. As illustrated in Fig. 2a, the synthesis of ML

    SUPPLEMENTARY INFORMATION doi:nature14417 SUPPLEMENTARY METHODS MOCVD growth of ML MoS2 and WS2 films. As illustrated in Fig. 2a, the synthesis of ML

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    Source URL: park.chem.cornell.edu

    Language: English - Date: 2015-05-17 22:51:54
    4www.advmat.de  RESEARCH NEWS www.MaterialsViews.com

    www.advmat.de RESEARCH NEWS www.MaterialsViews.com

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    Source URL: www.scs.illinois.edu

    Language: English - Date: 2010-03-09 13:23:45
    5Research Article www.acsami.org Water-Soluble Thin Film Transistors and Circuits Based on Amorphous Indium−Gallium−Zinc Oxide Sung Hun Jin,*,†,¶ Seung-Kyun Kang,⊥,¶ In-Tak Cho,§,¶ Sang Youn Han,⊥,# Ha Uk Ch

    Research Article www.acsami.org Water-Soluble Thin Film Transistors and Circuits Based on Amorphous Indium−Gallium−Zinc Oxide Sung Hun Jin,*,†,¶ Seung-Kyun Kang,⊥,¶ In-Tak Cho,§,¶ Sang Youn Han,⊥,# Ha Uk Ch

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    Source URL: rogers.matse.illinois.edu

    Language: English - Date: 2015-05-04 07:20:04
    680 Technology focus: LEDs  Long-wavelength N-polar indium gallium nitride LEDs MOVPE process achieves red emission with 633.4nm wavelength, longer than other –c-plane InGaN LEDs, according to researchers.

    80 Technology focus: LEDs Long-wavelength N-polar indium gallium nitride LEDs MOVPE process achieves red emission with 633.4nm wavelength, longer than other –c-plane InGaN LEDs, according to researchers.

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    Source URL: www.semiconductor-today.com

    Language: English - Date: 2015-09-01 10:46:08
      782 Technology focus: Nitride materials  Indium surfactant for higher hole concentration in gallium nitride Ammonia-based MBE process suppresses compensating donor effects.

      82 Technology focus: Nitride materials Indium surfactant for higher hole concentration in gallium nitride Ammonia-based MBE process suppresses compensating donor effects.

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      Source URL: www.semiconductor-today.com

      Language: English - Date: 2015-09-01 10:46:01
        8     EUROPEAN ORGANIZATION FOR NUCLEAR RESEARCH Addendum to the ISOLDE and Neutron Time-of-Flight Committee

            EUROPEAN ORGANIZATION FOR NUCLEAR RESEARCH Addendum to the ISOLDE and Neutron Time-of-Flight Committee

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        Source URL: joao.web.cern.ch

        Language: English - Date: 2014-03-26 16:28:59
        9   LED DOT MATRIX BL-M23A881XXX Features: Ø 60.20mm (2.3”) F 5.0 dot matrix LED display, RGB COLOR

          LED DOT MATRIX BL-M23A881XXX Features: Ø 60.20mm (2.3”) F 5.0 dot matrix LED display, RGB COLOR

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        Source URL: shop.emscdn.com

        Language: English - Date: 2010-06-24 13:14:53
        10January 2015 Vol. 22, No. 1 ISSN: Table of

        January 2015 Vol. 22, No. 1 ISSN: Table of

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        Source URL: eds.ieee.org

        Language: English - Date: 2015-01-19 15:44:00