Insulated gate bipolar transistor

Results: 160



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1Modeling Controlled Switches and Diodes for Electro-Thermal Simulation

Modeling Controlled Switches and Diodes for Electro-Thermal Simulation

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Source URL: www.jonathankimball.com

Language: English - Date: 2006-11-14 18:10:24
2TECHNICAL High-Frequency, GaN Diode-Free Motor Drive Inverter with Pure Sine Wave Output Y-F. Wu, D. Kebort, J. Guerrero, S. Yea,

TECHNICAL High-Frequency, GaN Diode-Free Motor Drive Inverter with Pure Sine Wave Output Y-F. Wu, D. Kebort, J. Guerrero, S. Yea,

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Source URL: www.powertransmission.com

Language: English - Date: 2014-07-17 14:18:45
3ANApplication Note Designing Hard-switched Bridges with GaN 1. Diode-free bridges. GaN power HEMTs are nearly ideal switches for many applications. A particular advantage in

ANApplication Note Designing Hard-switched Bridges with GaN 1. Diode-free bridges. GaN power HEMTs are nearly ideal switches for many applications. A particular advantage in

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Source URL: www.transphormusa.com

Language: English - Date: 2016-08-11 14:26:01
4Application Note | AN103 IGBT Prognostics Used in Trains and Traction Drive Systems Overview of Traction Drive Systems The traditional DC (direct current) electric motor driving a locomotive is a machine consisting of a

Application Note | AN103 IGBT Prognostics Used in Trains and Traction Drive Systems Overview of Traction Drive Systems The traditional DC (direct current) electric motor driving a locomotive is a machine consisting of a

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Source URL: www.ridgetopgroup.com

Language: English - Date: 2015-07-18 01:30:08
5Microsoft Word - APEC 2009 R3.doc

Microsoft Word - APEC 2009 R3.doc

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Source URL: www.jonathankimball.com

Language: English - Date: 2009-04-14 22:57:14
6Evaluating Conduction Loss of a Parallel IGBT-MOSFET Combination Jonathan W. Kimball, Member Patrick L. Chapman, Member Grainger Center for Electric Machinery and Electromechanics

Evaluating Conduction Loss of a Parallel IGBT-MOSFET Combination Jonathan W. Kimball, Member Patrick L. Chapman, Member Grainger Center for Electric Machinery and Electromechanics

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Source URL: www.jonathankimball.com

Language: English - Date: 2006-11-14 18:07:24
7A CRITICAL ANALYSIS OF IGBT GEOMETRIES, WITH THE INTENTION OF MITIGATING UNDESIRABLE DESTRUCTION CAUSED BY FAULT SCENARIOS OF AN ADVERSE NATURE G. E. Leyh, SLAC, Menlo Park CAAbstract Megawa

A CRITICAL ANALYSIS OF IGBT GEOMETRIES, WITH THE INTENTION OF MITIGATING UNDESIRABLE DESTRUCTION CAUSED BY FAULT SCENARIOS OF AN ADVERSE NATURE G. E. Leyh, SLAC, Menlo Park CAAbstract Megawa

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Source URL: www-group.slac.stanford.edu

Language: English - Date: 2003-05-07 14:01:39
8PD -91656C IRG4PC40W INSULATED GATE BIPOLAR TRANSISTOR Features

PD -91656C IRG4PC40W INSULATED GATE BIPOLAR TRANSISTOR Features

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Source URL: www.irf.com

Language: English - Date: 2007-08-18 13:32:41
    9Session Title: [TuB3] 01: Power Semiconductor Devices and Packaging (1) Date:

    Session Title: [TuB3] 01: Power Semiconductor Devices and Packaging (1) Date:

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    Source URL: www.icpe2015.org

    Language: English - Date: 2015-05-22 13:46:38
    10Lifetime prediction of high-power press-pack IGBTs in wind power applications PhD student: Cristian Busca Email: Aalborg University, Department of Energy Technology, Denmark

    Lifetime prediction of high-power press-pack IGBTs in wind power applications PhD student: Cristian Busca Email: Aalborg University, Department of Energy Technology, Denmark

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    Source URL: www.corpe.et.aau.dk

    Language: English - Date: 2014-11-05 14:03:14