Semiconductor growth

Results: 157



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1Study of vacancy-type defects after post-growth annealing of undoped GaAs V. Bondarenko, K.Petters and R. Krause-Rehberg Introduction • SI GaAs  one of the most common materials for semiconductor devices

Study of vacancy-type defects after post-growth annealing of undoped GaAs V. Bondarenko, K.Petters and R. Krause-Rehberg Introduction • SI GaAs  one of the most common materials for semiconductor devices

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Source URL: positron.physik.uni-halle.de

Language: English - Date: 2006-06-15 12:02:18
    2www.pwc.com  The Internet of Things: The next growth engine for the semiconductor industry

    www.pwc.com The Internet of Things: The next growth engine for the semiconductor industry

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    Source URL: www.pwc.ie

    Language: English - Date: 2016-08-19 06:16:46
    3F R A U N H O F E R I N S T I T U T E F O R I N T E G R AT E D S Y S T E M S A N D D E V I C E T E C H N O L O G Y I I S B  CRYSTALLINE MATERIALS FOR ELECTRONIC AND ENERGY SYSTEMS  CONTACT

    F R A U N H O F E R I N S T I T U T E F O R I N T E G R AT E D S Y S T E M S A N D D E V I C E T E C H N O L O G Y I I S B CRYSTALLINE MATERIALS FOR ELECTRONIC AND ENERGY SYSTEMS CONTACT

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    Source URL: www.iisb.fraunhofer.de

    Language: English - Date: 2016-06-08 05:11:47
    4SUPPLEMENTARY INFORMATION  doi:nature14417 SUPPLEMENTARY METHODS MOCVD growth of ML MoS2 and WS2 films. As illustrated in Fig. 2a, the synthesis of ML

    SUPPLEMENTARY INFORMATION doi:nature14417 SUPPLEMENTARY METHODS MOCVD growth of ML MoS2 and WS2 films. As illustrated in Fig. 2a, the synthesis of ML

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    Source URL: park.chem.cornell.edu

    Language: English - Date: 2015-05-17 22:51:54
    5High Mobility HEMT Growth with Water-cooling MBE System T.Takamatsu, S.Takagi and G.Kido National Reserch Institute for Metals 3-13 Sakura, Tsukuba, Ibaraki, Japan High mobility GaAs / AlGaAs HEMT structures wer

    High Mobility HEMT Growth with Water-cooling MBE System T.Takamatsu, S.Takagi and G.Kido National Reserch Institute for Metals 3-13 Sakura, Tsukuba, Ibaraki, Japan High mobility GaAs / AlGaAs HEMT structures wer

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    Source URL: www.1974eiko.co.jp

    Language: English - Date: 2009-05-08 06:40:08
    6TowerJazz Provides 2016 Growth Outlook; Built upon 2015 Notable Increases in Record Revenues with the Associated Margins and Net Profit Fourth Quarter 2015 Results: Record Revenue of $255 million, Record EBITDA of $76 mi

    TowerJazz Provides 2016 Growth Outlook; Built upon 2015 Notable Increases in Record Revenues with the Associated Margins and Net Profit Fourth Quarter 2015 Results: Record Revenue of $255 million, Record EBITDA of $76 mi

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    Source URL: www.towerjazz.com

    Language: English - Date: 2016-02-24 12:45:01
    7The 19th International Conference on Crystal Growth and Epitaxy (ICCGE-19) Keystone, Colorado, U.S.A. * July 28–August 2, 2019 and th  The 17 International Summer School on Crystal Growth (ISSCG-17)

    The 19th International Conference on Crystal Growth and Epitaxy (ICCGE-19) Keystone, Colorado, U.S.A. * July 28–August 2, 2019 and th The 17 International Summer School on Crystal Growth (ISSCG-17)

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    Source URL: www.crystalgrowth.org

    Language: English - Date: 2016-07-21 08:38:28
    8Comparison of the growth kinetics of In2O3 and Ga2O3 and their suboxide desorption during plasma-assisted molecular beam epitaxy Patrick Vogt and Oliver Bierwagen Citation: Applied Physics Letters 109, ); doi

    Comparison of the growth kinetics of In2O3 and Ga2O3 and their suboxide desorption during plasma-assisted molecular beam epitaxy Patrick Vogt and Oliver Bierwagen Citation: Applied Physics Letters 109, ); doi

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    Source URL: www.pdi-berlin.de

    Language: English - Date: 2016-08-08 18:15:09
    9Practical Course K2 Luminescence of Quantum Dots

    Practical Course K2 Luminescence of Quantum Dots

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    Source URL: www.nano.physik.uni-muenchen.de

    Language: English - Date: 2015-02-04 09:51:39
    10Microsoft Word - ENHANCE-Flyer

    Microsoft Word - ENHANCE-Flyer

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    Source URL: www.enhance-itn.eu

    Language: English - Date: 2009-07-07 12:06:02