Comparison of the growth kinetics of In2O3 and Ga2O3 and their suboxide desorption during plasma-assisted molecular beam epitaxy Patrick Vogt and Oliver Bierwagen Citation: Applied Physics Letters 109, ); doi

Source URL: www.pdi-berlin.de

• Oxides
• Semiconductor device fabrication
• Thin film deposition
• Surface science
• Desorption
• Gallium(III) oxide
• Suboxide
• Ultra-high vacuum
• Epitaxy