High-electron-mobility transistor

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1

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Source URL: f1duj.free.fr

Language: English - Date: 2005-04-28 17:39:27
2TDPS251E0D2 Application Note: TDPS251E0D2 LLC DC/DC Converter Evaluation Board 1. Introduction The Evaluation Board for an LLC circuit using GaN HEMTs is described in this paper. In this

TDPS251E0D2 Application Note: TDPS251E0D2 LLC DC/DC Converter Evaluation Board 1. Introduction The Evaluation Board for an LLC circuit using GaN HEMTs is described in this paper. In this

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Source URL: www.transphormusa.com

Language: English - Date: 2016-08-11 14:26:47
3Paper Title (use style: paper title)

Paper Title (use style: paper title)

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Source URL: www.merl.com

Language: English - Date: 2016-07-29 10:26:03
4Industry-Academia Workshop on GaN Technology August 9, 10: 00 – 16:00, Technion Zisapel Nanoelectonics Building, seminar room 4th floor. Program 10:00 Opening Remarks, Dan Ritter, Technion, David Rosenfeld, IMOD

Industry-Academia Workshop on GaN Technology August 9, 10: 00 – 16:00, Technion Zisapel Nanoelectonics Building, seminar room 4th floor. Program 10:00 Opening Remarks, Dan Ritter, Technion, David Rosenfeld, IMOD

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Source URL: webee.technion.ac.il

Language: English - Date: 2016-07-25 07:39:37
5Investigation of Driver Circuits for GaN HEMTs in Leaded Packages Zhan Wang, Jim Honea Yuxiang Shi, Hui Li

Investigation of Driver Circuits for GaN HEMTs in Leaded Packages Zhan Wang, Jim Honea Yuxiang Shi, Hui Li

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Source URL: www.transphormusa.com

Language: English - Date: 2016-08-11 14:28:58
6High Mobility HEMT Growth with Water-cooling MBE System T.Takamatsu, S.Takagi and G.Kido National Reserch Institute for Metals 3-13 Sakura, Tsukuba, Ibaraki, Japan High mobility GaAs / AlGaAs HEMT structures wer

High Mobility HEMT Growth with Water-cooling MBE System T.Takamatsu, S.Takagi and G.Kido National Reserch Institute for Metals 3-13 Sakura, Tsukuba, Ibaraki, Japan High mobility GaAs / AlGaAs HEMT structures wer

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Source URL: www.1974eiko.co.jp

Language: English - Date: 2009-05-08 06:40:08
7TDTTP4000W066 Rev1.0 Application Note: TDTTP4000W066 Totem Pole PFC Evaluation Board 1. Introduction The Evaluation Board for a bridgeless totem-pole Power-Factor-Correction (PFC) circuit,

TDTTP4000W066 Rev1.0 Application Note: TDTTP4000W066 Totem Pole PFC Evaluation Board 1. Introduction The Evaluation Board for a bridgeless totem-pole Power-Factor-Correction (PFC) circuit,

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Source URL: www.transphormusa.com

Language: English - Date: 2016-08-11 14:28:57
8Characteristics of Transphorm GaN Power Switches

Characteristics of Transphorm GaN Power Switches

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Source URL: www.transphormusa.com

Language: English - Date: 2016-08-11 14:26:01
9Paralleling GaN HEMTs for Diode-free Bridge Power Converters Zhan Wang, Yifeng Wu, Jim Honea, Liang Zhou Power Electronics Circuit Group, Transphorm Inc., Goleta, CA, USA

Paralleling GaN HEMTs for Diode-free Bridge Power Converters Zhan Wang, Yifeng Wu, Jim Honea, Liang Zhou Power Electronics Circuit Group, Transphorm Inc., Goleta, CA, USA

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Source URL: www.glyn.de

Language: English - Date: 2015-07-27 09:21:02
10Practical Course K2 Luminescence of Quantum Dots

Practical Course K2 Luminescence of Quantum Dots

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Source URL: www.nano.physik.uni-muenchen.de

Language: English - Date: 2015-02-04 09:51:39