Epitaxy

Results: 265



#Item
51Process Solutions from MKS Instruments for Chemical Vapor Deposition (CVD)

Process Solutions from MKS Instruments for Chemical Vapor Deposition (CVD)

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Source URL: www.mksinst.com

Language: English - Date: 2011-10-14 10:07:48
52Semiconductors / Metalorganics / Lund / Abstract / RIS / Copyright / Academia / Data / Information / Compound semiconductors

16th European Workshop on Metalorganic Vapour Phase Epitaxy (EWMOVPE XVI) June 7 – 10, 2015, Lund, Sweden The title of extended abstract for the 16th EWMOVPE in Lund, Sweden (Times New Roman, centered, bold, 1.2 spaced

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Source URL: www.nano.lu.se

Language: English - Date: 2015-03-26 09:07:31
53LayTec In-situ Seminar EWMOVPE-XVI Invitation

LayTec In-situ Seminar EWMOVPE-XVI Invitation

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Source URL: www.nano.lu.se

Language: English - Date: 2015-05-13 02:41:58
54Microsoft PowerPoint - Vasudevan_2015_CNMSUserProjectHighlight_ACSNano.pptx [Read-Only]

Microsoft PowerPoint - Vasudevan_2015_CNMSUserProjectHighlight_ACSNano.pptx [Read-Only]

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Source URL: www.cnms.ornl.gov

Language: English - Date: 2015-04-01 14:25:33
55F r a u n h o f e r I n s t i t u t e f o r I n t e g r at e d S y s t e m s a n d D e v i c e T e c h n o l o g y  1 2

F r a u n h o f e r I n s t i t u t e f o r I n t e g r at e d S y s t e m s a n d D e v i c e T e c h n o l o g y 1 2

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Source URL: www.iisb.fraunhofer.de

Language: English - Date: 2015-06-08 13:41:42
56Kinematic Analysis of a Space Mechanism—Rendezvous Simulator

Kinematic Analysis of a Space Mechanism—Rendezvous Simulator

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Source URL: www.abhinavjournal.com

Language: English - Date: 2013-12-17 06:28:40
57Ddddddd  REGISTRATION FORM LayTec‘s 20th In-situ Seminar In conjunction with the 16th European Workshop on Metalorganic Vapor Phase Epitaxy (EWMOVPE XVI)

Ddddddd REGISTRATION FORM LayTec‘s 20th In-situ Seminar In conjunction with the 16th European Workshop on Metalorganic Vapor Phase Epitaxy (EWMOVPE XVI)

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Source URL: www.nano.lu.se

- Date: 2015-05-13 02:42:57
    58Publications that quote the use of OAR atom sources Nitrides (AlN, GaN, InN) 1. Evaluation of a new plasma source for molecular beam epitaxial growth of InN and GaN films. W Hoke P Lemonias & D Weir. J Crystal Growth 111

    Publications that quote the use of OAR atom sources Nitrides (AlN, GaN, InN) 1. Evaluation of a new plasma source for molecular beam epitaxial growth of InN and GaN films. W Hoke P Lemonias & D Weir. J Crystal Growth 111

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    Source URL: www.oaresearch.co.uk

    Language: English - Date: 2015-04-23 17:42:57
    59Photon Factory Activity Report 2004 #22 Part BSurface and Interface 4C, 15C, 18B/2004G059  Ordered Structure in the Thermal Oxide Layer

    Photon Factory Activity Report 2004 #22 Part BSurface and Interface 4C, 15C, 18B/2004G059 Ordered Structure in the Thermal Oxide Layer

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    Source URL: pfwww.kek.jp

    Language: English - Date: 2010-01-05 10:31:04
    60Surface and Interface  4C/2002G062 Ordered structure in the internal thermal oxide layer of SIMOX wafers Takayoshi SHIMURA*1, Kazunori FUKUDA1, Kiyoshi YASUTAKE1, and

    Surface and Interface 4C/2002G062 Ordered structure in the internal thermal oxide layer of SIMOX wafers Takayoshi SHIMURA*1, Kazunori FUKUDA1, Kiyoshi YASUTAKE1, and

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    Source URL: pfwww.kek.jp

    Language: English - Date: 2010-01-05 10:30:29