Rubrene

Results: 6



#Item
1VOLUME 93, N UMBER 8  PHYSICA L R EVIEW LET T ERS week ending 20 AUGUST 2004

VOLUME 93, N UMBER 8 PHYSICA L R EVIEW LET T ERS week ending 20 AUGUST 2004

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Source URL: rogers.matse.illinois.edu

Language: English - Date: 2004-09-14 20:39:00
2Organic Field-Effect-Transistors: Its mechanism, application and recent advances Hiroshi M. Yamamoto Institute for Molecular Science, Myodaiji, Okazaki, Japan e-mail address:

Organic Field-Effect-Transistors: Its mechanism, application and recent advances Hiroshi M. Yamamoto Institute for Molecular Science, Myodaiji, Okazaki, Japan e-mail address:

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Source URL: www.ims.ac.jp

Language: English - Date: 2013-08-26 03:49:24
32 Materials Science  A combination of surface X-ray scattering measurement and a new method of analysis makes it possible to observe the near-surface electron density distribution of an organic semiconductor, which has a

2 Materials Science A combination of surface X-ray scattering measurement and a new method of analysis makes it possible to observe the near-surface electron density distribution of an organic semiconductor, which has a

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Source URL: pfwww.kek.jp

Language: English - Date: 2011-01-28 02:47:26
4Principal Research Results  Charge Dynamics at the Interface of Organic/Inorganic Composites: Best-performing Organic Field-effect Transistors Featuring Organic Crystalline Surfaces Background

Principal Research Results Charge Dynamics at the Interface of Organic/Inorganic Composites: Best-performing Organic Field-effect Transistors Featuring Organic Crystalline Surfaces Background

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Source URL: criepi.denken.or.jp

Language: English - Date: 2008-09-29 03:21:08
5CrossMark_Color_Stacked_p

CrossMark_Color_Stacked_p

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Source URL: www.pskl.ust.hk

Language: English - Date: 2013-09-30 03:29:34
6High performance organic field-effect transistors with fluoropolymer gate dielectric Wolfgang L. Kalba , Thomas Mathis, Simon Haas, Arno F. Stassen and Bertram Batlogg Laboratory for Solid State Physics, ETH Zurich, 8

High performance organic field-effect transistors with fluoropolymer gate dielectric Wolfgang L. Kalba , Thomas Mathis, Simon Haas, Arno F. Stassen and Bertram Batlogg Laboratory for Solid State Physics, ETH Zurich, 8

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Source URL: www.pnm.ethz.ch

Language: English - Date: 2008-07-07 07:14:36