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Transistors
Results: 228

#	Item
21	FX Type: Fuzz © 2014 madbeanpedals 1.96” W x 1.15” H This project is a silicon version of the Tonebender fuzz, most closely comparing to the Coloursound® Mark ii™. There are man Add to Reading List Source URL: madbeanpedals.com Language: English - Date: 2014-08-01 19:54:15 Bipolar transistors Electrical engineering 2N3904 Transistor 2N2222 Fuzz Electrical equipment Electromagnetism
22	APPLIED PHYSICS LETTERS 89, 143502 共2006兲 Pressure sensing by flexible, organic, field effect transistors I. Manunza, A. Sulis, and A. Bonfiglioa兲 CNISM; Department of Electric and Electronic Engineering, Universi Add to Reading List Source URL: www.diee.unica.it Language: English - Date: 2009-07-13 07:54:52 Electromagnetism Electronics Electrical engineering Molecular electronics Organic electronics Organic field-effect transistor Field-effect transistor Transistor Threshold voltage Semiconductor device Piezoresistive effect Organic semiconductor
23	EE 121 INTRO. TO ELECTRONIC DEVICES Materials and device structures for applications in analog and digital electronics. Topics include characteristics and basic circuits for diodes, field-effect transistors, bipolar jun Add to Reading List Source URL: ece.mst.edu Language: English - Date: 2012-09-05 05:02:22 Chemistry Condensed matter physics Electromagnetism Charge carriers Optoelectronics Semiconductor device fabrication Solar cells Extrinsic semiconductor Doping Semiconductor Intrinsic semiconductor Gallium arsenide
24	APPLIED PHYSICS LETTERS 88, 023506 共2006兲 Soft lithography fabrication of all-organic bottom-contact and top-contact field effect transistors P. Cosseddu and A. Bonfiglio INFM-University of Cagliari, Department of E Add to Reading List Source URL: www.diee.unica.it Language: English - Date: 2009-07-13 07:56:40 Electronics Electromagnetism Molecular electronics Organic semiconductors Electrical engineering Organic electronics Organic field-effect transistor Pentacene Transistor Field-effect transistor Threshold voltage Semiconductor
25	Overcoming historical challenges in carbon nanotubes and nanoribbons to enable their application in transistors and photovoltaics Michael S. Arnold University of Wisconsin-Madison Contact e-mail: Add to Reading List Source URL: www.nt15.jp Language: English - Date: 2015-03-24 06:04:00 Nanomaterials Emerging technologies Matter Carbon nanotubes Chemistry Graphene Manufacturing Space elevator Graphene nanoribbons Potential applications of graphene Nanotube Potential applications of carbon nanotubes
26	2N3904 / MMBT3904 / PZT3904 NPN General-Purpose Amplifier Description This device is designed as a general-purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifi Add to Reading List Source URL: www.fairchildsemi.com Language: English - Date: 2016-08-23 09:31:56 Bipolar transistors Electrical engineering Electronic engineering Electromagnetism Transistor Bipolar junction transistor 2N3904 TO-92 2N2222 BC548
27	APPLIED PHYSICS LETTERS 88, 163511 共2006兲 Organic light-emitting transistors using concentric source/drain electrodes on a molecular adhesion layer Clara Santato CNR, ISMN, Via Gobetti 101, 40129 Bologna, Italy Add to Reading List Source URL: www.diee.unica.it Language: English - Date: 2009-07-22 06:42:26 Molecular electronics Organic electronics Organic field-effect transistor
28	Paper Title (use style: paper title) Add to Reading List Source URL: www.merl.com Language: English - Date: 2016-07-29 10:26:03 Chemistry Matter Nitrides Transistors High-electron-mobility transistor Terahertz technology Monolithic microwave integrated circuit Gallium nitride Two-dimensional electron gas Indium aluminium nitride Synthetic diamond Indium gallium nitride
29	2015 20th IEEE European Test Symposium (ETS) ! New Drain Current Model for Nano-Meter MOS Transistors On-Chip Threshold Voltage Test Add to Reading List Source URL: www.ridgetopgroup.com Language: English - Date: 2015-08-06 17:54:54 Electronic engineering Electrical engineering Electromagnetism Integrated circuits Semiconductor devices Electronic design Logic families Electronic circuits MOSFET Drain-induced barrier lowering CMOS Threshold voltage
30	Radio frequency analog electronics based on carbon nanotube transistors Coskun Kocabas, Hoon-sik Kim†, Tony Banks‡, John A. Rogers†§¶储‡, Aaron A. Pesetski††, James E. Baumgardner††, S. V. Krishnasw Add to Reading List Source URL: rogers.matse.illinois.edu Language: English* - Date: 2008-01-28 19:21:12 Electromagnetism Emerging technologies Chemistry Electrical engineering Carbon nanotubes Space elevator Transistor Amplifier Transconductance MOSFET Field-effect transistor Gallium nitride

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