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Transistors
Results: 228

#	Item
91	Surface and Interface 2C/2002S2-002 Chemical reaction and metallic cluster formation by annealing-temperature control in ZrO2 gate insulator on Si Add to Reading List Source URL: pfwww.kek.jp Language: English - Date: 2010-01-05 10:30:04 Annealing Silicide Photoemission spectroscopy Chemistry Physics Electrical engineering Electronic engineering High-k dielectric Transistors
92	Organic Field-Effect-Transistors: Its mechanism, application and recent advances Hiroshi M. Yamamoto Institute for Molecular Science, Myodaiji, Okazaki, Japan e-mail address: Add to Reading List Source URL: www.ims.ac.jp Language: English - Date: 2013-08-26 03:49:24 Organic semiconductors Molecular electronics Organic electronics Semiconductor devices Light-emitting diodes Organic field-effect transistor Pentacene Rubrene Transistor Electronics Chemistry Electromagnetism
93	In The LAB Semiconducting the Future Microelectronic devices group explores new materials for future computer chips and high-power transistors As computer-chip makers struggle to build faster Add to Reading List Source URL: www-mtl.mit.edu Language: English - Date: 2013-04-16 14:14:58 Inorganic compounds Indium gallium arsenide Gallium nitride Gallium arsenide Transistor Integrated circuit Field-effect transistor Gallium Light-emitting diode Chemistry Semiconductor devices Compound semiconductors
94	Photon Factory Activity Report 2006 #24 Part BChemistry 2C/2005S2-002 Thermal decomposition of LaAlO3/SiO2/Si gate stack structures studied by Add to Reading List Source URL: pfwww.kek.jp Language: English - Date: 2010-01-05 10:34:17 Transistors Silicon dioxide Ultra-high vacuum MOSFET Gallium nitride Annealing Chemistry Electronic engineering High-k dielectric
95	Photon Factory Activity Report 2008 #26 Part BSurface and Interface 2C/2008S2-003 In-depth profiles of Hf-based gate insulator films on Si substrates studied by angle-resolved photoemission spectroscopy Add to Reading List Source URL: pfwww.kek.jp Language: English - Date: 2010-01-05 10:36:04 High-k dielectric Transistors Physics Photoemission spectroscopy Chemistry Angle-resolved photoemission spectroscopy Annealing Layer Materials science Emission spectroscopy Semiconductor device fabrication Electronic engineering
96	Taxel-Addressable Matrix of Vertical-Nanowire Piezotronic Transistors for Active and Adaptive Tactile Imaging Wenzhuo Wu et al. Science 340, ); DOI: science Add to Reading List Source URL: www.nanoscience.gatech.edu Language: English - Date: 2013-09-18 12:54:04 Inorganic compounds Deformation Solid mechanics Elasticity Zinc oxide Piezotronics Strength of materials Yield Gallium nitride Chemistry Materials science Physics
97	Photon Factory Activity Report 2008 #26 Part BSurface and Interface 2C/2005S2-002 Control of oxidation and reduction in HfSiON/Si through N2 exposure Hiroyuki KAMADA1, Tatsuhiko TANIMURA1, Satoshi TOYODA1-3, Hir Add to Reading List Source URL: pfwww.kek.jp Language: English* - Date: 2010-01-05 10:36:03 Thin film deposition Electronic engineering High-k dielectric Transistors Ceramic materials Gate dielectric Atomic layer deposition Annealing Equivalent oxide thickness Chemistry Materials science Electromagnetism
98	Photon Factory Activity Report 2009 #27 Part BSurface and Interface 2C/2008S2003 Interfacial reactions for Ru metal-electrode/HfSiON gate stack structures studied Add to Reading List Source URL: pfwww.kek.jp Language: English - Date: 2010-12-27 22:22:07 Semiconductor device fabrication Superhard materials Transistors Ceramic materials Atomic layer deposition High-k dielectric Ruthenium(IV) oxide Silicon dioxide Titanium nitride Chemistry Matter Electronic engineering
99	Photon Factory Activity Report 2005 #23Part BSurface and Interface 2C/2002S2-002 Annealing-temperature dependence: Mechanism of Hf silicidation in HfO2 gate Add to Reading List Source URL: pfwww.kek.jp Language: English - Date: 2010-01-05 10:32:21 Transistors Annealing Silicon monoxide High-k dielectric Layer Silicon dioxide Silicide Photoemission spectroscopy Chemistry Semiconductor device fabrication Silicon compounds
100	Photon Factory Activity Report 2008 #26 Part BSurface and Interface 2C/2008S2-003 Effects of thermal annealing on charge density and N chemical states in HfSiON films studied by photoemission spectroscopy Add to Reading List Source URL: pfwww.kek.jp Language: English - Date: 2010-01-05 10:36:05 Technology Electronic engineering High-k dielectric Transistors Oxide Chemical vapor deposition Vacuum Photoemission spectroscopy Chemistry Semiconductor device fabrication Physics

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