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Transistor
Results: 2038

#	Item
931	High mobility p-channel HFETs using strained Sb-based materials J.B. Boos, B.R. Bennett, N.A. Papanicolaou, M.G. Ancona, J.G. Champlain, R. Bass and B.V. Shanabrook Antimonide-based p-channel HFETs with a 0.25 mm gate le Add to Reading List Source URL: www.nrl.navy.mil Language: English - Date: 2013-11-22 13:51:51 Semiconductor devices MOSFET Field-effect transistor Transistor High electron mobility transistor Threshold voltage Transconductance Quantum well Electronics Electrical engineering Electromagnetism
932	Antimony-based Quaternary Alloys for High-Speed Low-Power Electronic Devices R. Magno* 1, B. R. Bennett1, K. Ikossi1, M. G. Ancona1, E. R. Glaser1, N. Papanicolaou1, J. B. Boos1, B. V. Shanabrook1, and A. Gutierrez2 1 Na Add to Reading List Source URL: www.nrl.navy.mil Language: English - Date: 2013-11-22 14:33:37 Ceramic materials Heterojunction bipolar transistor Heterojunction Bipolar junction transistor Lattice constant Silicon carbide Band gap Gallium phosphide Semiconductor Chemistry Electronics Electromagnetism
933	Insulated Gate Bipolar Transistor Market: Global Industry Analysis, Market Size, Share, Growth and Forecast[removed]Transparency Market Research has added a new report titled, "Insulated Gate Bipolar Transistor Marke Add to Reading List Source URL: www.prweb.com Language: English - Date: 2014-07-21 14:00:11 Electromagnetism Semiconductor devices Insulated gate bipolar transistor Power semiconductor device MOSFET Transistor Market research Field-effect transistor Electronic component Power electronics Electronics Electronic engineering
934	Hindawi Publishing Corporation Active and Passive Electronic Components Volume 2011, Article ID[removed], 4 pages doi:[removed][removed]Research Article Add to Reading List Source URL: downloads.hindawi.com Language: English - Date: 2014-05-08 04:31:06 Electromagnetism MOSFET Threshold voltage Hindawi Publishing Corporation Field-effect transistor Gate oxide Transistor Electrical engineering Semiconductor devices Technology
935	Data Sheet[removed]* STR-S6703 AND STR-S6704 Add to Reading List Source URL: www.electronica-pt.com Language: English - Date: 2009-01-20 20:29:32 Power electronics Power supplies Switched-mode power supply Linear regulator Flyback converter Analog circuits Bipolar junction transistor DC-to-DC converter Electrical engineering Electromagnetism Electronics
936	CNY70 Vishay Semiconductors Reflective Optical Sensor with Transistor Output Description The CNY70 has a compact construction where the Add to Reading List Source URL: www.bwired.nl Language: English - Date: 2008-05-29 20:01:43 Electronic engineering Transistor Light-emitting diode Diode Technology Semiconductor devices Bipolar junction transistor Electrical engineering
937	CS5322 Two-Phase Buck Controller with Integrated Gate Drivers and 5-Bit DAC The CS5322 is a two–phase step down controller which incorporates all control functions required to power high performance Add to Reading List Source URL: www.intusoft.com Language: English - Date: 2011-03-23 12:50:42 Analog circuits Integrated circuits Current source Electric current Linear regulator IC power supply pin Field-effect transistor Capacitance Open collector Electromagnetism Electronics Electronic engineering
938	Compact model for ultra-short channel four-terminal DG MOSFETs for exploring circuit characteristics T. Nakagawa, T. Sekigawa, T. Tsutsumi*, M. Hioki, E. Suzuki, and H. Koike * Electroinformatics Group, Add to Reading List Source URL: www.nsti.org Language: English - Date: 2011-11-18 13:54:24 Electrical engineering Semiconductors Short-channel effect Transistor Field-effect transistor Electron mobility Drain Induced Barrier Lowering Channel length modulation Power MOSFET Electronic engineering Technology MOSFET
939	RF Modeling of 45nm Low-Power CMOS Technology Jing Wang, Hongmei Li, Li-Hong Pan, Usha Gogineni**, Robert Groves, Basanth Jagannathan, Myung-Hee Na, William Tonti** and Richard Wachnik* * IBM Semiconductor Resea Add to Reading List Source URL: www.nsti.org Language: English - Date: 2014-06-04 17:41:40 MOSFET Electronic design Capacitance Common source Field-effect transistor CMOS Electromagnetism Electronic engineering Electronics
940	InAs HEMT narrowband ampliﬁer with ultra-low power dissipation W. Kruppa, J.B. Boos, B.R. Bennett, N.A. Papanicolaou, D. Park and R. Bass The design, fabrication and performance of a prototype narrowband ampliﬁer usi Add to Reading List Source URL: www.nrl.navy.mil Language: English - Date: 2013-11-22 12:53:46 High electron mobility transistor Electromagnetism Gain compression Technology Transistor Electronics

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