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Transistor
Results: 2038

#	Item
781	[removed]PRODUCT RELIABILITY REPORT FOR 71M6543HT Add to Reading List Source URL: www.maximintegrated.com Language: English - Date: 2013-12-11 14:58:35 Design for X Materials science Reliability engineering Software quality Survival analysis Electronic engineering Reliability Transistor Technology Failure Systems engineering
782	[removed]PRODUCT RELIABILITY REPORT FOR 71M6543FT Add to Reading List Source URL: www.maximintegrated.com Language: English - Date: 2013-07-29 07:45:35 Design for X Materials science Reliability engineering Software quality Survival analysis Electronic engineering Reliability Transistor Technology Failure Systems engineering
783	CEP73A3G/CEB73A3G N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY Add to Reading List Source URL: web2.cetsemi.com Language: English - Date: 2014-12-23 03:00:02 Threshold voltage Diode Field-effect transistor
784	Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania[removed][removed]Structure and Operation of IGBT Module 4.0 Using IGBT Modules Add to Reading List Source URL: www.galco.com Language: English - Date: 2011-04-20 11:31:40 Electromagnetism Semiconductor devices Insulated gate bipolar transistor Power semiconductor device Power MOSFET Transistor Powerex Bipolar junction transistor MOSFET Electronic engineering Electronics Power electronics
785	CGH40006P 6 W, RF Power GaN HEMT Cree’s CGH40006P is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40006P, operating from a 28 volt rail, offers a general purpose, broadband solu Add to Reading List Source URL: www.cree.com Language: English - Date: 2014-07-08 11:55:04 Cree ANT Microwave Technology Telecommunications engineering DBm
786	Breakthrough homoepitaxial graphene tunnel barrier/transport channel device Add to Reading List Source URL: phys.org Language: English - Date: 2015-03-03 14:09:34 Physics Materials science Graphene Bilayer graphene Spintronics Field-effect transistor Transistor Emerging technologies Chemistry Nanomaterials
787	PHYSICS-BASED MODELING OF NPT AND PT IGBTS AT DEEP CRYOGENIC TEMPERATURES A. Caiafa, A. Snezhko, J.L. Hudgins†, E. Santi, R. Prozorov, and P.R. Palmer‡ Department of Electrical Engineering University of South Car Add to Reading List Source URL: cmp.physics.iastate.edu Language: English - Date: 2011-01-11 23:51:49** Power electronics Semiconductor devices Insulated gate bipolar transistor Semiconductors Transistor Snubber Gate turn-off thyristor Thyristor Diode Electrical engineering Electromagnetism Electronic engineering
788	2480 IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, VOL. 49, NO. 12, DECEMBER 2001 Current-Mode Class-D Power Amplifiers for High-Efficiency RF Applications Add to Reading List Source URL: sigma.ucsd.edu Language: English - Date: 2007-01-10 14:43:40 Electronic circuits Analog circuits Transistor Amplifier Push–pull output Class-D amplifier Current source Electronic amplifier Switched-mode power supply Electronic engineering Electromagnetism Electronics
789	[removed]PRODUCT RELIABILITY REPORT FOR 71M6542FT Add to Reading List Source URL: www.maximintegrated.com Language: English - Date: 2013-07-29 07:46:43 Design for X Materials science Reliability engineering Software quality Survival analysis Electronic engineering Reliability Transistor Technology Failure Systems engineering
790	1764 IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, VOL. 60, NO. 6, JUNE 2012 A Review of GaN on SiC High Electron-Mobility Power Transistors and MMICs Add to Reading List Source URL: www.cree.com Language: English - Date: 2014-05-08 10:01:10 Semiconductor devices Integrated circuits High electron mobility transistor Transistor Monolithic microwave integrated circuit Gallium nitride Field-effect transistor MOSFET MESFET Electronic engineering Electronics Technology

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