MESFET

Results: 19



#Item
1GaAs & GaN Build your own solution with UMS  FOUNDRY

GaAs & GaN Build your own solution with UMS FOUNDRY

Add to Reading List

Source URL: www.ums-gaas.com

Language: English - Date: 2013-07-19 03:07:38
21 Simulation of 2D Silicon MESFET using GNU/Archimedes J.M.Sellier1 Dipartimento di Matematica e Informatica, Universita’ di Catania, Italy, ,

1 Simulation of 2D Silicon MESFET using GNU/Archimedes J.M.Sellier1 Dipartimento di Matematica e Informatica, Universita’ di Catania, Italy, ,

Add to Reading List

Source URL: gnu.org

Language: English - Date: 2005-02-20 06:30:36
3#1  ELECTRONIC RESOURCE  2005  Design, implementation, and testing of a software interface between the AN/SPS­  65(V)1 radar and the SRC­6E reconfigurable computer / Thomas G. Guthrie  Guthrie

#1  ELECTRONIC RESOURCE  2005  Design, implementation, and testing of a software interface between the AN/SPS­  65(V)1 radar and the SRC­6E reconfigurable computer / Thomas G. Guthrie  Guthrie

Add to Reading List

Source URL: www.nps.edu

Language: English - Date: 2013-06-21 18:22:02
4

PDF Document

Add to Reading List

Source URL: www.nict.go.jp

Language: English - Date: 2014-08-13 01:18:17
51 Simulation of 2D Silicon MESFET using GNU/Archimedes J.M.Sellier1 Dipartimento di Matematica e Informatica, Universita’ di Catania, Italy, [removed],

1 Simulation of 2D Silicon MESFET using GNU/Archimedes J.M.Sellier1 Dipartimento di Matematica e Informatica, Universita’ di Catania, Italy, [removed],

Add to Reading List

Source URL: www.gnu.org

Language: English - Date: 2005-02-20 06:30:36
61764  IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, VOL. 60, NO. 6, JUNE 2012 A Review of GaN on SiC High Electron-Mobility Power Transistors and MMICs

1764 IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, VOL. 60, NO. 6, JUNE 2012 A Review of GaN on SiC High Electron-Mobility Power Transistors and MMICs

Add to Reading List

Source URL: www.cree.com

Language: English - Date: 2014-05-08 10:01:10
7646  IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 36. NO. 4, APRIL 1989 A Recessed-Gate In,.52A10.48As/n+-1%.53G%. 4 7 A ~ MIS-type FET

646 IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 36. NO. 4, APRIL 1989 A Recessed-Gate In,.52A10.48As/n+-1%.53G%. 4 7 A ~ MIS-type FET

Add to Reading List

Source URL: www-mtl.mit.edu

Language: English - Date: 2013-04-16 14:15:15
8IEICE TRANS. ELECTRON., VOL.E91–C, NO.7 JULY[removed]INVITED PAPER

IEICE TRANS. ELECTRON., VOL.E91–C, NO.7 JULY[removed]INVITED PAPER

Add to Reading List

Source URL: www.nrl.navy.mil

Language: English - Date: 2013-11-22 12:50:23
9ECE Executive Committee Meeting

ECE Executive Committee Meeting

Add to Reading List

Source URL: www.ece.utoronto.ca

Language: English - Date: 2014-10-29 09:43:16
10FURTHER EVALUATION of GaAs FETs for CRYOGENIC READOUT  Randall K. Kjrhman* arKi John A. Lipa w. w. Hansen Experimental Physics Laboratories Stanfoni University

FURTHER EVALUATION of GaAs FETs for CRYOGENIC READOUT Randall K. Kjrhman* arKi John A. Lipa w. w. Hansen Experimental Physics Laboratories Stanfoni University

Add to Reading List

Source URL: einstein.stanford.edu

Language: English - Date: 2007-10-12 14:27:26