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MOSFETs
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#	Item
31	3 LEVELS OF SAVINGS Transistors, J-FETs, MOSFETs & Diodes ✳ Order in multiples of 10 Part No. Add to Reading List Source URL: www.jameco.com Language: English - Date: 2014-06-18 15:45:16 Diode MOSFET Technology Electronics Electrical engineering Power electronics Transistor Power MOSFET
32	IEEE ELECTRON DEVICE LETTERS, VOL. 34, NO. 11, NOVEMBER[removed]Antimonide-Based Heterostructure p-Channel MOSFETs With Ni-Alloy Source/Drain Add to Reading List Source URL: www.nrl.navy.mil Language: English - Date: 2013-11-26 12:58:30 Compound semiconductors Inorganic compounds Transistor MOSFET Gallium arsenide Schottky diode Schottky barrier Light-emitting diode Focused ion beam Chemistry Electronics Semiconductor devices
33	Press release P3298I STMicroelectronics Reveals Climate-Saving Power Devices with High-Temperature Performance Edge ST is among first to commercialize silicon-carbide power MOSFETs, and achieves Add to Reading List Source URL: hugin.info Language: English - Date: 2014-03-12 08:40:23 Power electronics Semiconductor devices Power MOSFET Power semiconductor device Silicon carbide Transistor MOSFET Insulated gate bipolar transistor Light-emitting diode Electronic engineering Electronics Electromagnetism
34	Precise 2D Compact Modeling of Nanoscale DG MOSFETs Based on Conformal Mapping Techniques T. A. Fjeldly , S. Kolberg and B. Iñiguez** * UniK – University Graduate Center, Norwegian University of Science and Technol Add to Reading List Source URL: www.nsti.org Language: English - Date: 2012-06-27 17:07:44 Drain Induced Barrier Lowering Technology Threshold voltage Field-effect transistor Multigate device Work function Short-channel effect Charge carriers Transistors Electrical engineering Physics MOSFET
35	Compact model for ultra-short channel four-terminal DG MOSFETs for exploring circuit characteristics T. Nakagawa, T. Sekigawa, T. Tsutsumi*, M. Hioki, E. Suzuki, and H. Koike * Electroinformatics Group, Add to Reading List Source URL: www.nsti.org Language: English - Date: 2011-11-18 13:54:24 Electrical engineering Semiconductors Short-channel effect Transistor Field-effect transistor Electron mobility Drain Induced Barrier Lowering Channel length modulation Power MOSFET Electronic engineering Technology MOSFET
36	Technical Note: 2 Depth Dose Measurements using MOSFETS, diodes and ion chambers Abstract: The percent depth dose of 6 and 20 MeV photon beams were measured for various field sizes using three different types of radiati Add to Reading List Source URL: www.mosfet.ca Language: English - Date: 2012-10-11 14:00:22 Medical physics Radiobiology Radioactivity Nuclear physics Dosimetry Ionizing radiation Percentage depth dose curve MOSFET Electron Medicine Physics Radiation oncology
37	4H-SiC MOSFETs with High Channel Mobility by P-Doped Gate Oxide Assistant Prof. Hiroshi YANO (NAIST) 1. 4H-SiC MOSFET DC Transmission Add to Reading List Source URL: www.jst.go.jp Language: English - Date: 2012-11-19 02:09:11 Power electronics Semiconductor devices MOSFET Field-effect transistor Gate oxide Threshold voltage Silicon carbide Insulated gate bipolar transistor Polysilicon depletion effect Electrical engineering Electronic engineering Technology
38	4H-SiC Trench MOSFETs with High Channel Mobility by using Tilted Trench Sidewalls Assistant Prof. Hiroshi YANO (NAIST) 1. Trench MOSFET Add to Reading List Source URL: www.jst.go.jp Language: English - Date: 2012-11-19 02:09:50 MOSFET Field-effect transistor Transistor Threshold voltage JFET Power electronics Power MOSFET Channel length modulation Electrical engineering Technology Electromagnetism
39	Compact Models for Double Gate and Surround Gate MOSFETs * ** Henok Abebe, Ellis Cumberbatch, Hedley Morris and Shigeyasu Uno Add to Reading List Source URL: www.cgu.edu Language: English* - Date: 2006-06-15 18:36:21 Trigonometry Dimensional analysis Measurement MOSFET
40	Analytical Formulae of Quantum-Mechanical Electron Density in Inversion Layer in Planar MOSFETs Shigeyasu Uno, Henok Abebe ∗, and Ellis Cumberbatch † Add to Reading List Source URL: www.cgu.edu Language: English - Date: 2006-06-15 18:37:04 Electronic band structure Mathematical analysis Quantum mechanics Physics Perturbation theory

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