Session Title: [TuB3] 01: Power Semiconductor Devices and Packaging (1) Date: - Insulated gate bipolar transistor - Document - PDFSEARCH.IO

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	Session Title: [TuB3] 01: Power Semiconductor Devices and Packaging (1) Date: Add to Reading List Document Date: 2015-05-22 13:46:38 Open Document File Size: 109,83 KB Share Result on Facebook Company Fuji Electric Co. Ltd. / / Country Japan / Australia / Taiwan / Germany / United Kingdom / / Organization Nat'l United Univ. / Univ. of Warwick / l United Univ. / Univ. of Erlangen-Nuremberg / / Person Ting Huang / Bernhard Piepenbreier / Jennifer Lautner / / Position GaN Gate Driver / / ProvinceOrState New South Wales / / Region South Wales / / Technology High Power Density Technology / Semiconductor Devices / / SocialTag Electronic engineering Semiconductor devices Insulated gate bipolar transistor MOSFET Power semiconductor device Field-effect transistor Gallium nitride High electron mobility transistor Ikawa Chemistry

Session Title: [TuB3] 01: Power Semiconductor Devices and Packaging (1) Date:Add to Reading List