Solution-processed single-walled carbon nanotube field effect transistors and bootstrapped inverters for disintegratable, transient electronics Sung Hun Jin, Jongmin Shin, In-Tak Cho, Sang Youn Han, Dong Joon Lee, Chi Hw

Source URL: rogers.matse.illinois.edu

• Carbon nanotubes
• Emerging technologies
• Space elevator
• Gallium nitride
• Transistor
• Field-effect transistor
• Power inverter

Journal of Undergraduate Research 1, Optimization of Surface Preparation and Surface Passivation for GaSb Infrared Photodetectors G. Hearn University of South Carolina, Columbia, SC 29208

Source URL: jur.phy.uic.edu

• Semiconductor device fabrication
• Corrosion prevention
• Passivation
• Silicon carbide
• Layer
• Gallium
• Light-emitting diode

Stretchable Electronics: Stretchable InorganicSemiconductor Electronic Systems (Adv. Mater)

Source URL: rogers.matse.illinois.edu

• Electronic engineering
• Electronics manufacturing
• Light-emitting diode
• Signage
• Integrated circuits
• Printed circuit board
• Semiconductor device fabrication
• Three-dimensional integrated circuit
• Dynamic random-access memory
• Gallium nitride
• Silicon carbide

Automata Mista G´erard Huet INRIA Rocquencourt, BP 105, 78153 Le Chesnay Cedex, France, , http://pauillac.inria.fr/~huet

Source URL: gallium.inria.fr

• Finite automata
• Control theory
• Finite-state transducer
• Index of standards articles

PRESS RELEASE Advanced Accelerator Applications Announces FDA Approval of NETSPOTTM (Somakit-TATE), a Kit for the Preparation of Gallium Ga 68 Dotatate for Neuroendocrine Tumor Detection NETSPOT

Source URL: www.adacap.com

Practical Course K2 Luminescence of Quantum Dots

Source URL: www.nano.physik.uni-muenchen.de

• Chemistry
• Condensed matter physics
• Matter
• Thin film deposition
• Semiconductor growth
• Optoelectronics
• Inorganic compounds
• Superlattice
• Gallium arsenide
• Quantum dot
• Heterojunction
• High-electron-mobility transistor

Literaturverzeichnis [1] R. Addinall, R. C. Newman: GaAs and BAs antisite defects in gallium arsenide. Semicond. Sci. Technol. [2] H. Alexander: Dislocations in covalent crystals. In Dislocations in solids

Source URL: sundoc.bibliothek.uni-halle.de

MATEC Web of Conferences 4 0, ) DOI: m atecconf0 6  C Owned by the authors, published by EDP Sciences, 2016 Review of wide band-gap semiconductors technology

Source URL: www.matec-conferences.org

• Chemistry
• Electromagnetism
• Electronics
• Semiconductor devices
• Semiconductor device fabrication
• Gallium nitride
• Nitrides
• Transistor
• High-electron-mobility transistor
• Power semiconductor device
• Monolithic microwave integrated circuit
• Semiconductor

Towards vertical III-V nanowire devices on silicon Erik P.A.M. Bakkers, Magnus T. Borgstrom, Wim van den Einden, Maarten van Weert, Ethan D. Minot, Freek Kelkensberg, Maarten van Kouwen, Jorden A. van Dam, Leo P. Kouwen

Source URL: kouwenhovenlab.tudelft.nl

• Chemistry
• Matter
• Mesoscopic physics
• Semiconductor device fabrication
• Optoelectronics
• Nanoelectronics
• Nanowire
• Indium phosphide
• Doping
• Quantum dot
• Semiconductor
• Gallium arsenide

PDF Document

Source URL: aspelmeyer.quantum.at

• Chemistry
• Thin-film optics
• Materials science
• Anti-reflective coating
• Coating
• FabryProt interferometer
• LIGO
• Aluminium gallium arsenide
• Light-emitting diode
• Optical cavity
• Gallium arsenide