Floating-gate MOSFET

Results: 19



#Item
1lllllllllllllllllllllllllllllllllllllllllllllllllllllllllllllllllllllllllll United States Patent US005095344A  [191

lllllllllllllllllllllllllllllllllllllllllllllllllllllllllllllllllllllllllll United States Patent US005095344A [191

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Source URL: ethw.org

Language: English - Date: 2011-10-12 18:25:22
2SESSION IX: STATIC AND NONVOLATILE MEMORIES THAM 9.6: A 256-Bit Nonvolatile Static RAM Eli Harari, Lawrence Schmitz, Bruce Troutman and Samuel wang Hughes Aircraft Co.

SESSION IX: STATIC AND NONVOLATILE MEMORIES THAM 9.6: A 256-Bit Nonvolatile Static RAM Eli Harari, Lawrence Schmitz, Bruce Troutman and Samuel wang Hughes Aircraft Co.

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Source URL: ethw.org

Language: English - Date: 2012-03-02 14:05:54
3IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 61, NO. 6, JUNEOptimization and Evaluation of Variability in the Programming Window of a Flash Cell With

IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 61, NO. 6, JUNEOptimization and Evaluation of Variability in the Programming Window of a Flash Cell With

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Source URL: www.chem.gla.ac.uk

Language: English - Date: 2014-07-03 06:39:22
4

PDF Document

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Source URL: www.princeton.edu

Language: English - Date: 2006-08-19 17:00:54
5Data remanence in non-volatile semiconductor memory (Part I) Security Group  Sergei Skorobogatov

Data remanence in non-volatile semiconductor memory (Part I) Security Group Sergei Skorobogatov

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Source URL: www.cl.cam.ac.uk

Language: English - Date: 2013-09-24 13:58:52
62386  IEEE TRANSACTIONS ON ELECTRON DEVICES. VOL. 36. NO. II. NOVEMBER 1989 A Floating-Gate Transmission-Line Model Technique for Measuring Source Resistance in Heterostructure

2386 IEEE TRANSACTIONS ON ELECTRON DEVICES. VOL. 36. NO. II. NOVEMBER 1989 A Floating-Gate Transmission-Line Model Technique for Measuring Source Resistance in Heterostructure

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Source URL: www-mtl.mit.edu

Language: English - Date: 2013-04-16 14:15:16
7Data remanence in non-volatile semiconductor memory (Part I) Security Group  Sergei Skorobogatov

Data remanence in non-volatile semiconductor memory (Part I) Security Group Sergei Skorobogatov

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Source URL: www.cl.cam.ac.uk

Language: English - Date: 2004-11-03 05:46:18
8Data Remanence in Flash Memory Devices Sergei Skorobogatov University of Cambridge, Computer Laboratory, 15 JJ Thomson Avenue, Cambridge CB3 0FD, United Kingdom [removed]

Data Remanence in Flash Memory Devices Sergei Skorobogatov University of Cambridge, Computer Laboratory, 15 JJ Thomson Avenue, Cambridge CB3 0FD, United Kingdom [removed]

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Source URL: www.cl.cam.ac.uk

Language: English - Date: 2005-08-09 07:34:54
9Microscopic Theory of Energy Distribution of SiO2/Si Interface Traps: A Survey of History and Some New Results  Zuhui Chen Sah Pen-Tung Center, Xiamen University, China  Binbin Jie Institute of Microelectronics, Peking U

Microscopic Theory of Energy Distribution of SiO2/Si Interface Traps: A Survey of History and Some New Results Zuhui Chen Sah Pen-Tung Center, Xiamen University, China Binbin Jie Institute of Microelectronics, Peking U

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Source URL: www.nsti.org

Language: English - Date: 2007-07-11 13:45:43
10NE3rd 12.book Seite 1031 Dienstag, 14. Februar[removed]:[removed]Index Index A

NE3rd 12.book Seite 1031 Dienstag, 14. Februar[removed]:[removed]Index Index A

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Source URL: www.wiley-vch.de

Language: English - Date: 2012-05-06 21:05:39