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Transistors
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161	16 Quantum Computing and Communications We’ve seen many ways in which physical laws set profound limits: messages can’t travel faster than the speed of light; transistors can’t be shrunk below the size of an atom. Add to Reading List Source URL: academy.cba.mit.edu Language: English - Date: 2013-05-13 09:44:30 Operator theory Mathematical physics Spectrum Canonical commutation relation Operator Self-adjoint operator Ladder operator Uncertainty principle Angular momentum Physics Quantum mechanics Rotational symmetry
162	Aligned, Semiconducting Carbon Nanotube Transistors M. Engel2, J. P. Small2, M. Steiner2, M. Freitag2, A. A. Green1, M. C. Hersam1, and Ph. Avouris2 1Northwestern University Materials Research Science & Engineering Cente Add to Reading List Source URL: www.mrsec.northwestern.edu Language: English - Date: 2013-03-08 15:31:55 Materials science Materials Research Science and Engineering Centers Technology Electromagnetism Carbon nanotubes in medicine Carbon nanotube field-effect transistor Carbon nanotubes Emerging technologies Carbon nanotube
163	High Performance Carbon Nanotube Thin-Film Transistors Enabled by Hybrid Molecular Dielectrics Vinod K. Sangwan, Rocio Ponce Ortiz, Justice M. P. Alaboson, Jonathan D. Emery, Michael J. Bedzyk, Lincoln J. Lauhon, Tobin J Add to Reading List Source URL: www.mrsec.northwestern.edu Language: English - Date: 2013-03-08 15:09:14 Carbon nanotube field-effect transistor NanoIntegris Carbon nanotubes Carbon nanotube Materials science
164	Steep-Slope Tunnel Field-Effect Transistor (FET) using III-V Nanowire on Si Prof. Takashi FUKUI & Dr. Katsuhiro TOMIOKA (Hokkaido University) As the scaling of Si transistors is reaching its limit, they are expected to h Add to Reading List Source URL: www.jst.go.jp Language: English - Date: 2013-11-20 21:23:43 Nanoelectronics Nanowire Transistor Field-effect transistor Threshold voltage Epitaxy Gallium arsenide Chemistry Electrical engineering Electromagnetism
165	ARPA-E PROJECT SELECTIONS – STRATEGIES FOR WIDE-BANDGAP, INEXPENSIVE TRANSISTORS FOR CONTROLLING HIGH EFFICIENCY SYSTEMS (SWITCHES) (SBIR/STTR) Published: October 21, 2013 Last Updated: October 21, 2013 These projects Add to Reading List Source URL: www.arpa-e.energy.gov Language: English - Date: 2013-10-21 10:23:07 Compound semiconductors Inorganic compounds Gallium nitride Nitrides Light-emitting diode Integrated circuit Semiconductor device Transistor Epitaxy Chemistry Semiconductor devices Semiconductor device fabrication
166	Pete Horowitz 136 Golden Gate Point #501, Sarasota, FL 34236; [removed] RF Power Amplification Using a High Voltage, High Current IGBT New insulated gate bipolar transistors offer some amazing power amplifier Add to Reading List Source URL: www.arrl.org Language: English - Date: 2014-05-13 15:59:26 Power electronics Semiconductor devices Electronic engineering Insulated gate bipolar transistor Transistor Power semiconductor device MOSFET Rectifier Diode Electromagnetism Electrical engineering Electronics
167	A Simplified Current-Voltage (I-V) Characteristics Model with Quantum Mechanical Effects for n-channel MOSFET Henok Abebe and Vance Tyree MOSIS service, USC Information Sciences Institute 4676 Admiralty Way, Marina del R Add to Reading List Source URL: www.cgu.edu Language: English - Date: 2006-06-15 18:37:14 Semiconductor devices Threshold voltage Transistors Electronic design MOSFET Polysilicon depletion effect Field-effect transistor Capacitance CMOS Electromagnetism Electrical engineering Electronic engineering
168	主要な発表論文及び国際会議での講演リスト List of Publications and Presentations at Major Conferences (1) W. F. Zhang, T. Nishimula, K. Nagashio, K. Kita, and A. Toriumi, "Conduction Band Offset at G Add to Reading List Source URL: www.scio.t.u-tokyo.ac.jp Language: English - Date: 2013-04-18 03:35:34 Electronic engineering High-k dielectric Transistors
169	SOCAMS 2004, Claremont, CA. Modeling Quantum Effects on Current/Voltage Characteristics of a MOSFET Transistor Henok Abebe, USC Information Sciences Institute, MOSIS Service, Ellis Cumberbatch, School of Mathematical Sci Add to Reading List Source URL: www.cgu.edu Language: English - Date: 2006-06-15 18:36:35 Electromagnetism Semiconductor devices Field-effect transistor Electronic engineering Power electronics Transistors Threshold voltage Channel length modulation Electrical engineering Technology MOSFET
170	NANO LETTERS Fabrication of Field-Effect Transistors from Hexathiapentacene Single-Crystal Nanowires Add to Reading List Source URL: depts.washington.edu Language: English - Date: 2007-05-14 21:42:55 Nanowire Electricity Semiconductor devices Transistor Organic field-effect transistor Rechargeable battery Pentacene Electronics Nanoelectronics Electromagnetism

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