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Transistor
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#	Item
961	Demonstration of high-mobility electron and hole transport in a single InGaSb well for complementary circuits Add to Reading List Source URL: www.nrl.navy.mil Language: English - Date: 2013-11-22 13:46:29 Field-effect transistor Indium gallium arsenide Gallium arsenide High electron mobility transistor Heterojunction Transistor Quantum well Electron mobility MOSFET Chemistry Physics Condensed matter physics
962	Microsoft PowerPoint - Hussain_Seminar Notice Add to Reading List Source URL: www.purdue.edu Language: English Multigate device King Abdullah University of Science and Technology Polycrystalline silicon Silicon CMOS Transistor Chemistry Electronic engineering Matter
963	IEICE TRANS. ELECTRON., VOL.E91–C, NO.7 JULY[removed]INVITED PAPER Add to Reading List Source URL: www.nrl.navy.mil Language: English - Date: 2013-11-22 12:50:23 Compound semiconductors Inorganic compounds High electron mobility transistor Transistor MESFET Field-effect transistor Heterojunction bipolar transistor Heterojunction Quantum well Chemistry Electronics Electromagnetism
964	Microsoft Word - Xbox v16.doc Add to Reading List Source URL: dwl.xbox-scene.com Language: English - Date: 2004-05-18 13:38:59 Electronics Technology Transistor Multimeter
965	Journal of ELECTRONIC MATERIALS, Vol. 39, No. 10, 2010 DOI: [removed]s11664[removed] Ó 2010 U.S. Naval Research Laboratory AlGaSb Buffer Layers for Sb-Based Transistors Add to Reading List Source URL: www.nrl.navy.mil Language: English - Date: 2013-11-22 12:43:54 Condensed matter physics Thin film deposition Semiconductor devices Materials science Physical quantities Superlattice High electron mobility transistor Gallium arsenide Heterojunction Chemistry Electronics Physics
966	InAlAsSb=InGaSb double heterojunction bipolar transistor R. Magno, J.B. Boos, P.M. Campbell, B.R. Bennett, E.R. Glaser, B.P. Tinkham, M.G. Ancona, K.D. Hobart, D. Park and N.A. Papanicolaou Add to Reading List Source URL: www.nrl.navy.mil Language: English - Date: 2013-11-22 14:28:49 Heterojunction bipolar transistor Bipolar junction transistor Transistor Heterojunction Silicon-germanium Common emitter Gummel plot Electronics Technology Electromagnetism
967	III-V 4D Transistors 1) J. J. Gu , X. W. Wang , J. Shao 3), A. T. Neal 1), M. J. Manfra 3), R. G. Gordon 2), and P. D. Ye 1)* 1) Add to Reading List Source URL: engineering.purdue.edu Language: English - Date: 2012-06-08 13:52:32 Nanowire Semiconductor devices Indium gallium arsenide MOSFET Transistor Semiconductor device fabrication Field-effect transistor Chemistry Nanoelectronics Technology
968	11664_2007_57_36_2-web[removed] Add to Reading List Source URL: www.nrl.navy.mil Language: English - Date: 2013-11-22 12:51:57 Inorganic compounds High electron mobility transistor Transistor Heterojunction Indium phosphide Gallium arsenide Aluminium indium arsenide Indium gallium arsenide Electronic band structure Chemistry Optoelectronics Compound semiconductors
969	REVISIONS LTR DESCRIPTION DATE Add to Reading List Source URL: www.landandmaritime.dla.mil Language: English - Date: 2013-01-11 12:58:03 Autodesk Electronic engineering Transistor Current source JEDEC Electromagnetism Electricity .dwg
970	ICM 2003, Dec. 9-11, Cairo, Egypt. A Novel Collector-tub Concept for Realizing High-Voltage Lateral Bipolar Transistors on SOI M Jagadesh Kumar* and Sukhendu Deb Roy Department of Electrical Engineering, Indian Instit Add to Reading List Source URL: eprint.iitd.ac.in Language: English - Date: 2006-08-08 16:30:27** Technology Power electronics Bipolar junction transistor Transistor Power semiconductor device Field-effect transistor Depletion region Diode Drift-field transistor Semiconductor devices Electronic engineering Electronics

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