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Nitrides
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#	Item
51	Improvement of Critical Temperature of Superconducting NbTiN and NbN Thin Films Using the AlN Buﬀer Layer Tatsuya Shiino, Shoichi Shiba, and Nami Sakai Department of Physics, The University of Tokyo, Hongo, Bunkyo-ku, Add to Reading List Source URL: www.resceu.s.u-tokyo.ac.jp Language: English - Date: 2010-03-24 04:38:00 Semiconductor device fabrication Thin film deposition Aluminium nitride Indium nitride Sputter deposition Light-emitting diode Gallium nitride Epitaxy Lattice constant Chemistry Matter Nitrides
52	Surface and Interface 2002S2-002 Photoemission study on interfacial reaction of Ti/n-GaN Takayuki Naono, Jun Okabayashi, Satoshi Toyoda, Hiroshi Fujioka, Masaharu Oshima, and Hiroshi Add to Reading List Source URL: pfwww.kek.jp Language: English - Date: 2010-01-05 10:30:35 Nitrides Materials science Condensed matter physics Ohmic contact Atomic physics Photoemission spectroscopy Work function Core electron Titanium nitride Chemistry Physics Semiconductor device fabrication
53	The development of Cost-effective, High-efficient Heat Dissipation PCBs for High-brightness LEDs ITF Project Ref.: ITS/257/09FP ISBN9 Add to Reading List Source URL: www.pctech.ise.polyu.edu.hk Language: English - Date: 2011-10-12 23:31:06 Lighting Signage Nitrides Polychlorinated biphenyl Thermal conductivity Thermal management of electronic devices and systems Solid Gallium nitride Epoxy Chemistry Light-emitting diodes Semiconductor devices
54	Photon Factory Activity Report 2007 #25 Part BSurface and Interface 2C/2005S2-002 Hf-silicidation reactions due to vacuum annealing for a-Si/ HfSiO(N)/ Si gate Add to Reading List Source URL: pfwww.kek.jp Language: English - Date: 2010-01-05 10:34:50 Nitrides Superhard materials Materials science Thin film deposition High-k dielectric Transistors Silicide Titanium nitride Atomic layer deposition Chemistry Semiconductor device fabrication Matter
55	DEVELOPMENT OF (Al)GaN RECESS ETCH FOR EMODE POWER HEMTs G. MANNAERT, V. PARASCHIV, B. DE JAEGER, M. VAN HOVE, M. DEMAND, S. DECOUTERE, W. BOULLART IMEC, KAPELDREEF 75, LEUVEN, B-3000, BELGIUM © IMECCONFIDENTIA Add to Reading List Source URL: www.leti.fr Language: English - Date: 2012-05-24 09:13:54 Gallium nitride IMEC Ohmic contact Aluminium gallium nitride Light-emitting diode Gan Chinese BCL3 Sulfur hexafluoride Chemistry Nitrides Semiconductor device fabrication
56	PDF Document Add to Reading List Source URL: communityrecycling.com.au Language: English - Date: 2015-03-22 19:56:11 Chromium nitride Nitrides
57	PDF Document Add to Reading List Source URL: www-mtl.mit.edu Language: English - Date: 2014-04-04 12:07:47 Semiconductor devices Power electronics Gallium nitride Nitrides Transistor MOSFET Field-effect transistor Light-emitting diode Silicon carbide Chemistry Electronic engineering Electronics
58	PDF Document Add to Reading List Source URL: www.fourmilab.ch Language: English - Date: 2003-12-16 15:42:55 Light-emitting diodes Semiconductor devices Signage Indium gallium nitride Gallium nitride Diode Chemistry Nitrides Lighting
59	February 3, 2015 Sumitomo Chemical to Acquire Compound Semiconductor Materials Business from Hitachi Metals Sumitomo Chemical has agreed today with Hitachi Metals, Ltd. to acquire their compound semiconductor materials b Add to Reading List Source URL: www.sumitomo-chem.co.jp Language: English - Date: 2015-02-03 00:52:15 Semiconductor device fabrication Optoelectronics Gallium nitride Nitrides Sumitomo Chemical Gallium arsenide Light-emitting diode Gallium Semiconductor Chemistry Compound semiconductors Inorganic compounds
60	TULANE SCHOOL OF SOCIAL WORK SUMMER 2015 FULL-TIME & PART TIME MSW SCHEDULE Cap of 24 on required classes; Wait list only for electives NOTE: FIELD resumes Monday, May 11; CLASSES on Tuesday, May 12 - August 14, 2015 Add to Reading List Source URL: tulane.edu Language: English - Date: 2015-04-07 12:47:21 Chromium nitride Nitrides Academic term

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