Leti_NR_UTSOI2_FINAL_11 03 15

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Date: 2015-04-09 08:55:05 Materials science Semiconductor devices Multigate device Transistor Silicon on insulator SOI MOSFET SPICE Software Technology Microtechnology		Leti_NR_UTSOI2_FINAL_11 03 15 Add to Reading List Source URL: www.leti.fr Download Document from Source Website File Size: 88,54 KB Share Document on Facebook

	F r a u n h o f e r I n s t i t u t e f o r Mic r o e l e c t r o n ic C i r c u i t s a n d S y s t e m s Programme Inter Carnot Fraunhofer HOTMOS High temperature SOI CMOS technology platform for applications up to 25 DocID: 1oD6k - View Document
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	Comprehensive Simulation Study of Statistical Variability in 32nm SOI MOSFET N. M. Idris1, B. Cheng1, A. R. Brown1, S. Markov1, and A. Asenov1,2 School of Engineering, University Of Glasgow, Glasgow, G12 8LT, Scotland, U DocID: 1bceD - View Document
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	Microsoft PowerPoint - HC18.310.S3T1.Z-RAM Ultra-dense Memory for 90nm and Below.V4.ppt DocID: WeJ3 - View Document