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MOSFETs
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#	Item
41	MATHEMATICS CLINIC ****************************************************************************************** Gate to Base Capacitance Modeling for Nano-scale MOSFETs Add to Reading List Source URL: www.cgu.edu Language: English - Date: 2007-07-05 17:46:41** Electron Introduction to quantum mechanics Partial differential equation Quantum mechanics Physics Introductory physics MOSFET
42	Modeling of Saturation-Region Characteristics of Nanoscale Double-Gate MOSFETs J. G. Fossum and S. Chouksey Department of Electrical and Computer Engineering University of Florida Add to Reading List Source URL: www.nsti.org Language: English - Date: 2007-07-11 13:39:25 Electron mobility X-height Velocity overshoot Condensed matter physics Materials science Physics Typography MOSFET
43	Primary Consideration on Compact Modeling of DG MOSFETs with Four-terminal Operation Mode T. Nakagawa, T. Sekigawa, T. Tsutsumi, E. Suzuki, and H. Koike Electroinformatics Group Nanoelectronics Research Institute Add to Reading List Source URL: www.nsti.org Language: English - Date: 2010-03-19 15:29:14 Symbol Transistor Logic MOSFET Entailment
44	2005 Workshop on Compact Modeling, May8-12,2005, Anaheim, California. U.S.A. Device Parameter Extraction from Fabricated Double-Gate MOSFETs Toshiyuki Tsutsumi,, Yongxun Liu, Tadashi Nakagawa, Add to Reading List Source URL: www.nsti.org Language: English* - Date: 2005-05-23 13:18:34 MOSFET Field-effect transistor Multigate device
45	BSIM-IMG: Analytical Surface-Potential Calculation in UTBSOI MOSFETs with Independent Back-Gate Control S. Khandelwal1,2, Y. S. Chauhan2, M. A. Karim2, S. Venugopalan2, A. Sachid2, A. Niknejad2 and C. Hu2 1Dept. of Elect Add to Reading List Source URL: www.techconnectworld.com Language: English - Date: 2012-11-12 14:58:35 MOSFET Very-large-scale integration Threshold voltage Electrical engineering Electromagnetism Electronic engineering
46	A Unified Process-Based Compact Model for Scaled PD/SOI and Bulk-Si MOSFETs Jerry G. Fossum University of Florida Gainesville, FL[removed]http://www.soi.tec.ufl.edu) Add to Reading List Source URL: www.nsti.org Language: English - Date: 2010-03-19 15:18:44 Technology MOSFET Drain Induced Barrier Lowering Silicon-germanium Field-effect transistor Bipolar junction transistor IC power supply pin Threshold voltage Transistor model Integrated circuits Electrical engineering Electronic engineering
47	Advanced Compact Models for MOSFETs Christian Enz, Carlos Galup-Montoro, Gennady Gildenblat, Chenming Hu, Ronald van Langevelde, Mitiko Miura-Mattausch, Rafael Rios, Chih-Tang (Tom) Sah Add to Reading List Source URL: www.nsti.org Language: English - Date: 2005-05-23 13:20:11 Electronic engineering Electronics Power MOSFET MOSFET Field-effect transistor Electrical engineering
48	Compact, Physics-based Modeling of Nanoscale Limits of Double-Gate MOSFETs Qiang Chen, Lihui Wang, Raghunath Murali and James D. Meindl March 10, 2004 Add to Reading List Source URL: www.nsti.org Language: English - Date: 2010-03-19 15:37:51 Electronic engineering High-k dielectric Threshold voltage Short-channel effect Meindl Symmetric matrix Electrical engineering Electromagnetism MOSFET
49	WCM 2004 The 7th international Conference on Modeling and Simulation of Microsystems Physics-Based Scalable Threshold-Voltage Model for Strained-Silicon MOSFETs Add to Reading List Source URL: www.nsti.org Language: English - Date: 2010-03-19 15:37:59 Integrated circuits Alloys Silicon-germanium MOSFET Strained silicon Threshold voltage Silicon carbide Field-effect transistor Chemistry Matter Silicon
50	Physical Modeling of Substrate Resistance in RF MOSFETs Hyungcheol Shin, Jeonghu Han, and Minkyu Je Dept. of EECS, KAIST, Korea Add to Reading List Source URL: www.nsti.org Language: English - Date: 2010-03-19 15:27:27 Electromagnetism Logic families Digital electronics MOSFET CMOS Threshold voltage Electronic engineering Electrical engineering Electronic design

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