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MOSFET
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#	Item
611	Present Status and Future Direction of BSIM SOI Model for High Performance/Low-Power/RF Application Samuel K. H. Fung, Pin Su, Wan Hui, Chenming Hu IBM Microelectronics, Semiconductor Research and Development Center ( Add to Reading List Source URL: www.nsti.org Language: English* - Date: 2010-03-19 15:20:38 Chenming Hu Electromagnetism Drain Induced Barrier Lowering Leakage Soi Electrical engineering BSIM MOSFET
612	WCM 2004 The 7th international Conference on Modeling and Simulation of Microsystems Physics-Based Scalable Threshold-Voltage Model for Strained-Silicon MOSFETs Add to Reading List Source URL: www.nsti.org Language: English - Date: 2010-03-19 15:37:59 Integrated circuits Alloys Silicon-germanium MOSFET Strained silicon Threshold voltage Silicon carbide Field-effect transistor Chemistry Matter Silicon
613	Microsoft PowerPoint - BCousin_23_06_2010_WCM [Compatibility Mode] Add to Reading List Source URL: www.techconnectworld.com Language: English - Date: 2010-08-24 11:10:38 Drain Induced Barrier Lowering Threshold voltage Short-channel effect Channel length modulation Nanowire Electrical engineering Electromagnetism MOSFET
614	Microsoft PowerPoint - Gildenblat_PSP_Nanotech05.ppt Add to Reading List Source URL: www.nsti.org Language: English - Date: 2010-03-19 15:55:47 Portable media players PlayStation NQS Electronics MOSFET Electrical engineering PlayStation Portable Electronic engineering Handheld game consoles
615	Microsoft PowerPoint - WCM05_GTCNoiseJamalDeen Add to Reading List Source URL: www.nsti.org Language: English - Date: 2005-05-23 13:15:13 Integrated circuits Electronics Technology CMOS Field-effect transistor Electronic engineering Electronic design MOSFET
616	RF Modeling for FDSOI MOSFET and Self Heating Effect on RF Parameter Extraction Hui Wan, Pin Su, Samuel Fung, Ali Niknejad, Chenming Hu University of California, Berkeley Add to Reading List Source URL: www.nsti.org Language: English - Date: 2010-03-19 15:56:04 Diode Field-effect transistor Materials science Chenming Hu BSIM Silicon on insulator Electronics Technology SOI MOSFET MOSFET
617	Physical Modeling of Substrate Resistance in RF MOSFETs Hyungcheol Shin, Jeonghu Han, and Minkyu Je Dept. of EECS, KAIST, Korea Add to Reading List Source URL: www.nsti.org Language: English - Date: 2010-03-19 15:27:27 Electromagnetism Logic families Digital electronics MOSFET CMOS Threshold voltage Electronic engineering Electrical engineering Electronic design
618	RF MOSFET Noise Parameter Extraction and Modeling M. Jamal Deen and Chih-Hung Chen Electrical and Computer Engineering Department McMaster University, Hamilton, ON, Canada L8S 4K1 E-mail: [removed] Add to Reading List Source URL: www.nsti.org Language: English - Date: 2010-03-19 15:18:42 Noise Noise figure M. Jamal Deen MOSFET Microwave McMaster University Scattering parameters Electronic engineering Technology Electromagnetism
619	An A Priori Hysteresis Modeling Methodology for Improved Efficiency and Model Accuracy in Advanced PD SOI Technologies Qiang Chen, Jung-Suk Goo, Niraj Subba, Xiaowen Cai, Judy X. An, Tran Ly, Zhi-Yuan Wu, Sushant Suryaga Add to Reading List Source URL: www.nsti.org Language: English - Date: 2005-05-23 13:18:00 Systems theory MOSFET Diode Field-effect transistor Bipolar junction transistor Physics Technology Science Magnetic ordering Hysteresis Materials science
620	Microsoft PowerPoint - WCM2005_presentation_bucher.ppt Add to Reading List Source URL: www.nsti.org Language: English - Date: 2005-05-31 14:34:36 Design Quality Indicator Visual arts Structure Electronic engineering NQS MOSFET

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