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MOSFET
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471	SOCAMS 2004, Claremont, CA. Modeling Quantum Effects on Current/Voltage Characteristics of a MOSFET Transistor Henok Abebe, USC Information Sciences Institute, MOSIS Service, Ellis Cumberbatch, School of Mathematical Sci Add to Reading List Source URL: www.cgu.edu Language: English - Date: 2006-06-15 18:36:35 Electromagnetism Semiconductor devices Field-effect transistor Electronic engineering Power electronics Transistors Threshold voltage Channel length modulation Electrical engineering Technology MOSFET
472	Microsoft Word - E3S Seminar June[removed] Add to Reading List Source URL: www.e3s-center.org Language: English Logic families MOSFET Digital electronics Electronic design Field-effect transistor Threshold voltage CMOS Transistor Electronic engineering Electrical engineering Electromagnetism
473	1 Analytical Results for the I-V Characteristics of a Fully Depleted SOI-MOSFET H. Morris, E. Cumberbatch, V. Tyree, H. Abebe Abstract: Explicit formulae for the I-V characteristics of an SOI/SOS MOSFET operating in the Add to Reading List Source URL: www.cgu.edu Language: English - Date: 2006-06-15 18:19:28 MOSFET Threshold voltage Field-effect transistor Depletion region Transistor Electronic design Semiconductors Electrical engineering Technology Electronic engineering
474	Microsoft Word - SCI05-II.doc Add to Reading List Source URL: www.cgu.edu Language: English - Date: 2006-06-15 18:37:14 Semiconductor devices Transistors Polysilicon depletion effect MOSFET Threshold voltage Electronic design Depletion region Field-effect transistor Depletion and enhancement modes Electronic engineering Electrical engineering Electromagnetism
475	Microsoft Word - AP-NI-Device-workshop-Report_120809 Add to Reading List Source URL: foresight.org Language: English - Date: 2012-08-10 14:17:07 Materials science Semiconductor device fabrication Nanomaterials Doping MOSFET Quantum computer Graphene Semiconductor Nanowire Physics Condensed matter physics Emerging technologies
476	Microsoft Word - johnres.doc Add to Reading List Source URL: www.nist.gov Language: English - Date: 2011-10-03 11:43:47 Electronic engineering Semiconductor device fabrication High-k dielectric Transistors Negative bias temperature instability Hot carrier injection MOSFET QBD Integrated circuit Electronics Technology Electromagnetism
477	Spectra Journal_FINAL.pdf Add to Reading List Source URL: www.seas.virginia.edu Language: English - Date: 2014-04-04 11:55:04 Nanomaterials MOSFET Subthreshold slope Threshold voltage Graphene Field-effect transistor Drain Induced Barrier Lowering Transistor Leakage Electrical engineering Electromagnetism Physics
478	Combinatorial Measurement Methods for Inorganic Materials Objective Gate electrode Add to Reading List Source URL: nist.gov Language: English - Date: 2012-10-04 11:41:41 High-k dielectric MOSFET Thermoelectric materials Capacitor Dielectric Capacitance Thermoelectric effect Gate dielectric Relative permittivity Electromagnetism Physics Electricity
479	Microsoft PowerPoint - AZnano08.ppt Add to Reading List Source URL: aznano.org Language: English - Date: 2014-01-08 05:03:35 Multigate device Materials science Electronics MOSFET Silicon on insulator Transistor Technology Freescale Semiconductor Power Architecture
480	NNIN Symposium on Frontiers in Nanoscale Transistors and Electronics February 6, 2012 What’s different below 10 nm? Seung Hyun Park, Saumitra Mehrotra, Tillmann Kubis Gerhard Klimeck, and Mark Lundstrom Add to Reading List Source URL: www.nanotech.ucsb.edu Language: English - Date: 2013-01-06 22:14:17 MOSFET Transistor Field-effect transistor

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