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Gallium
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#	Item
121	RESEARCH REPORT N° 7987 June 2012 Project-Teams Gallium and Celtique Add to Reading List Source URL: oucsace.cs.ohiou.edu Language: English - Date: 2012-06-01 12:38:22
122	ARTICLE Received 19 Jun 2012 \| Accepted 9 Nov 2012 \| Published 11 Dec 2012 DOI: ncomms2277 Growth and optical properties of axial Add to Reading List Source URL: kouwenhovenlab.tudelft.nl Language: English - Date: 2012-12-20 07:57:34 Chemistry Nanoelectronics Electronics Nanotechnology Mesoscopic physics Nanomaterials Nanowire Emerging technologies Gallium arsenide Silicon nanowire Quantum dot Superlattice
123	HexaTech AlN-20 Datasheet, Rev B.indd Add to Reading List Source URL: www.hexatechinc.com Language: English - Date: 2015-01-28 08:00:08 Chemistry Nitrides Light-emitting diode Gallium nitride Aluminium nitride Ultraviolet High-electron-mobility transistor Epitaxy Aluminium gallium nitride
124	80 Technology focus: InGaAs MOSFETs High-pressure anneal for indium gallium arsenide transistors Process reduces interface and border traps in aluminium oxide/hafnium dioxide Add to Reading List Source URL: www.semiconductor-today.com Language: English - Date: 2015-10-01 12:01:02
125	A generalization of F with abstraction Add to Reading List Source URL: gallium.inria.fr Language: English - Date: 2010-12-06 04:30:08
126	HexaTech AlN-50 Datasheet, Rev B.indd Add to Reading List Source URL: www.hexatechinc.com Language: English - Date: 2015-01-28 08:00:08 Nitrides Light-emitting diode Gallium nitride Aluminium nitride Ultraviolet High-electron-mobility transistor Epitaxy Aluminium gallium nitride
127	New Multijunction Design Leads to Ultra-Efficient Solar Cell Four-junction III-V multijunction cell uses buffer layers and other innovations to reach 45.6% efficiency at 690 suns NREL scientists have shown that four-junc Add to Reading List Source URL: www.nrel.gov Language: English - Date: 2015-09-01 17:25:25 Solar cells Energy conversion Semiconductor devices Multi-junction solar cell Gallium arsenide Indium gallium arsenide Photovoltaics National Renewable Energy Laboratory Quantum dot solar cell
128	80 Technology focus: LEDs Long-wavelength N-polar indium gallium nitride LEDs MOVPE process achieves red emission with 633.4nm wavelength, longer than other –c-plane InGaN LEDs, according to researchers. Add to Reading List Source URL: www.semiconductor-today.com Language: English - Date: 2015-09-01 10:46:08
129	82 Technology focus: Nitride materials Indium surfactant for higher hole concentration in gallium nitride Ammonia-based MBE process suppresses compensating donor effects. Add to Reading List Source URL: www.semiconductor-today.com Language: English - Date: 2015-09-01 10:46:01
130	RF/Microwave Die Attach of Gallium Nitride Devices Achieving Less Than 1% Voiding in a Flux-Free Environment Bruce Wilson SST International Downey, CA Add to Reading List Source URL: www.calce.umd.edu Language: English - Date: 2014-02-21 10:33:51

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