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Arsenide
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41	LED DOT MATRIX BL-M23A881XXX Features: Ø 60.20mm (2.3”) F 5.0 dot matrix LED display, RGB COLOR Add to Reading List Source URL: shop.emscdn.com Language: English - Date: 2010-06-24 13:14:53 Inorganic compounds Semiconductor devices Lighting Light-emitting diode Gallium phosphide Indium gallium nitride Gallium nitride Gallium arsenide Silicon carbide Chemistry Nitrides Compound semiconductors
42	Researchers devise a way to grow 3 atom thick semiconducting films with wafer scale homogeneity Add to Reading List Source URL: phys.org Language: English - Date: 2015-06-17 16:10:13 Emerging technologies Solar cells Graphene Thin film Molybdenum Gallium arsenide Wafer Semiconductor Chemistry Matter Semiconductor device fabrication
43	Microsoft Word - Press _release_pdf.doc Add to Reading List Source URL: www.psplc.com Language: English - Date: 2011-05-10 06:40:12 Physics Photonics Optical fiber Indium gallium arsenide Photonic crystal Chemistry Optics Electromagnetic radiation
44	University of Illinois at Urbana-Champaign Understanding the steps to the intricate dance inside a cell Add to Reading List Source URL: www.matse.illinois.edu Language: English - Date: 2010-06-22 16:31:27 Ilesanmi Adesida University of Illinois at Urbana–Champaign Lemelson Foundation Champaign–Urbana metropolitan area Gallium arsenide Illini Prosthetic Technologies Chemistry Champaign County Illinois Illinois
45	Quasi-Phase-Matched Gallium Arsenide for Mid-Infrared Frequency Conversion E. Lallier1, A. Grisard1, B. Gérard2, A. Hildenbrand3, C. Kieleck3, M. Eichhorn3 1. Thales Research & Technology, RD 128, FPalaiseau, Fra Add to Reading List Source URL: www.mirsurg.eu Language: English - Date: 2012-01-17 06:00:17 Solar cells Photonics Gallium arsenide Optoelectronics Optical parametric oscillator Laser Infrared Nonlinear optics Light-emitting diode Chemistry Electromagnetic radiation Optics
46	F R A U N H O F E R I N S T I T U T E F O R I N T E G R AT E D S Y S T E M S A N D D E V I C E T E C H N O L O G Y I I S B CRYSTALS AND CRYSTALLINE FUNCTIONAL LAYERS CONTACT Add to Reading List Source URL: www.iisb.fraunhofer.de Language: English - Date: 2015-06-09 20:13:09 Superhard materials Crystallography Solar cells Silicon carbide Epitaxy Materials science Crystal Gallium arsenide Silicon Chemistry Semiconductor device fabrication Thin film deposition
47	PH10 TECHNOLOGY The new UMS 0.1µm GaAs Very High Frequency pHEMT Process UMS is now pleased to extend its foundry offer with the opening of 0.1µm High Frequency GaAs pHEMT process. PH10 process is optimised for low noi Add to Reading List Source URL: www.ums-gaas.com Language: English - Date: 2012-07-19 03:50:56 High electron mobility transistor Gallium arsenide Chemistry Electronics Resistor
48	Kinematic Analysis of a Space Mechanism—Rendezvous Simulator Add to Reading List Source URL: www.abhinavjournal.com Language: English - Date: 2014-01-30 00:15:07 Optoelectronics Inorganic compounds Semiconductor device fabrication Gallium phosphide Indium phosphide Gallium arsenide Laser diode Light-emitting diode Doping Chemistry Phosphides Compound semiconductors
49	eagleyard Photonics GmbH Rudower ChausseeBerlin/Germany Press Release Add to Reading List Source URL: www.eagleyard.com Language: English - Date: 2015-02-06 08:12:28 Photonics Heat-assisted magnetic recording Laser diode Solar cells Laser Ferdinand-Braun-Institut Diode Gallium arsenide Helium–neon laser Chemistry Optics Light
50	LayTec In-situ Seminar EWMOVPE-XVI Invitation Add to Reading List Source URL: www.nano.lu.se Language: English - Date: 2015-05-13 02:41:58 Inorganic compounds Semiconductors Semiconductor growth Metalorganic vapour phase epitaxy Metalorganics Aluminium gallium arsenide Epitaxy Gallium arsenide Fax Chemistry Compound semiconductors Thin film deposition

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