Thyristor

Results: 154



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21Emitter efficiency:  Base transport factor Definition of common terms which define the

Emitter efficiency: Base transport factor Definition of common terms which define the

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Source URL: nanofab.caltech.edu

Language: English - Date: 2013-10-01 19:04:08
22IRFR_U4105ZPbF Product Data Sheet

IRFR_U4105ZPbF Product Data Sheet

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Source URL: www.singlechips.com

Language: English - Date: 2012-06-15 14:44:35
23Innovations Embedded  The Next Generation of Power Conversion Systems Enabled by SiC Power Devices  White Paper

Innovations Embedded The Next Generation of Power Conversion Systems Enabled by SiC Power Devices White Paper

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Source URL: www.rohm.com

Language: English
24Garog design_30_11_04.qxd

Garog design_30_11_04.qxd

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Source URL: www.liftmaster.com.au

Language: English - Date: 2008-07-28 21:36:17
25A Product Line of Diodes Incorporated APR34330C SECONDARY SIDE SYNCHRONOUS RECTIFICATION SWITCHER

A Product Line of Diodes Incorporated APR34330C SECONDARY SIDE SYNCHRONOUS RECTIFICATION SWITCHER

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Source URL: diodes.com

Language: English - Date: 2015-03-03 16:42:14
26A Product Line of Diodes Incorporated APR3415 SECONDARY SIDE SYNCHRONOUS RECTIFICATION SWITCHER

A Product Line of Diodes Incorporated APR3415 SECONDARY SIDE SYNCHRONOUS RECTIFICATION SWITCHER

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Source URL: diodes.com

Language: English - Date: 2014-12-16 18:39:35
27A Product Line of Diodes Incorporated APR34309CA SECONDARY SIDE SYNCHRONOUS RECTIFICATION SWITCHER

A Product Line of Diodes Incorporated APR34309CA SECONDARY SIDE SYNCHRONOUS RECTIFICATION SWITCHER

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Source URL: diodes.com

Language: English - Date: 2015-03-02 12:38:56
28The next stage in power semiconductors LESLIE LANGNAU, Associate Editor Recent design innovations have resulted in a new power semiconductor that can switch with the speed of an Insulated Gate Bipolar Transistor and cond

The next stage in power semiconductors LESLIE LANGNAU, Associate Editor Recent design innovations have resulted in a new power semiconductor that can switch with the speed of an Insulated Gate Bipolar Transistor and cond

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Source URL: fab.cba.mit.edu

Language: English - Date: 2010-09-15 01:34:30
29IEEE TRANSACTIONS ON NUCLEAR SCIENCE, VOL. 53, NO. 6, DECEMBER[removed]Nature of Interface Defect Buildup in Gated Bipolar Devices Under Low Dose Rate Irradiation

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, VOL. 53, NO. 6, DECEMBER[removed]Nature of Interface Defect Buildup in Gated Bipolar Devices Under Low Dose Rate Irradiation

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Source URL: lws-set.gsfc.nasa.gov

Language: English - Date: 2010-08-30 09:09:27
30G r o u p Tr a i n i n g l o g o specifications and guidelines for use The strength of any corporate logo is in the consistency of its usage. To assist you with strengthening the

G r o u p Tr a i n i n g l o g o specifications and guidelines for use The strength of any corporate logo is in the consistency of its usage. To assist you with strengthening the

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Source URL: www.australianapprenticeships.gov.au

Language: English - Date: 2014-08-08 03:05:48