JOURNAL OF APPLIED PHYSICS VOLUME 93, NUMBER 9

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Date: 2010-12-09 11:08:13 Technology Silicon on insulator Thermal oxidation Ion implantation Wafer Microelectromechanical systems Silicon on sapphire Smart Cut Epitaxy Semiconductor device fabrication Materials science Microtechnology		JOURNAL OF APPLIED PHYSICS VOLUME 93, NUMBER 9 Add to Reading List Source URL: www.soitec.com Download Document from Source Website File Size: 1,22 MB Share Document on Facebook

	Solid phase epitaxy of ultra-shallow Sn implanted Si observed using highresolution Rutherford backscattering spectrometry T. K. Chan, F. Fang, A. Markwitz, and T. Osipowicz Citation: Appl. Phys. Lett. 101, ); DocID: 1uZnZ - View Document
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	F R A U N H O F E R I N S T I T U T E F O R I N T E G R AT E D S Y S T E M S A N D D E V I C E T E C H N O L O G Y I I S B CRYSTALLINE MATERIALS FOR ELECTRONIC AND ENERGY SYSTEMS CONTACT DocID: 1qYk7 - View Document