Random dopant fluctuation

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1	Quantum corrections to the 'atomistic' MOSFET simulation - Computational Electronics, 2000. Book of Abstracts. IWCE Glasgow[removed]7th International Workshop Add to Reading List Source URL: eprints.gla.ac.uk Language: English - Date: 2011-08-15 10:02:41 Electromagnetism Semiconductor device fabrication MOSFET Threshold voltage Transistors Doping Field-effect transistor Random dopant fluctuation Gate oxide Electrical engineering Semiconductor devices Electronic engineering