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![]() Date: 2010-10-07 12:16:47Aluminium nitride Gallium nitride Semiconductor Band gap Temperature Indium nitride Quantum well Chemistry Nitrides Light-emitting diode | Source URL: publications.lib.chalmers.seDownload Document from Source WebsiteFile Size: 146,92 KBShare Document on Facebook |
![]() | APPLIED PHYSICS LETTERS 95, 103111 共2009兲 Piezoelectric nanoelectromechanical resonators based on aluminum nitride thin films R. B. Karabalin,1 M. H. Matheny,1 X. L. Feng,1 E. Defaÿ,2 G. Le Rhun,2 C. Marcoux,2 S. HDocID: 1qU0h - View Document |
![]() | 50 nm thick AlN film-based piezoelectric cantilevers for gravimetric detectionDocID: 1qAky - View Document |
![]() | Paper Title (use style: paper title)DocID: 1qzVz - View Document |
![]() | Industry-Academia Workshop on GaN Technology August 9, 10: 00 – 16:00, Technion Zisapel Nanoelectonics Building, seminar room 4th floor. Program 10:00 Opening Remarks, Dan Ritter, Technion, David Rosenfeld, IMODDocID: 1qgif - View Document |
![]() | HexaTech AlN-60 Datasheet, Rev B.inddDocID: 1lXkR - View Document |