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#	Item
401	UPGRADABLE DECK-MOUNT TUB FILLER MODEL NUMBER: R800 Deck-Mount Tub Filler Rough valve only. 1/2" sweat inlets. Add to Reading List Source URL: www.faucetdepot.com Language: English - Date: 2012-09-30 00:19:39 Piping Valve Water industry Brass Titanium nitride Materials science Plumbing Matter Chemistry
402	Mater. Res. Soc. Symp. Proc. Vol. 1206 © 2010 Materials Research Society[removed]M11-42 Catalyst-Free GaN Nanowire Nucleation: Correlation of Temperature-Dependent Nanowire Orientation and Growth Matrix Changes Add to Reading List Source URL: www.virginiaayres.com Language: English - Date: 2011-09-14 19:51:04 Nanowire Inorganic compounds Nitrides Gallium nitride Gallium(III) oxide Crystal growth Matrix Light-emitting diode Properties of water Chemistry Oxides Nanoelectronics
403	TOWN SQUARE™ ACCESSORIES TOWEL BAR Add to Reading List Source URL: hi.atgimg.com Language: English - Date: 2012-09-30 00:32:21 Bathrooms Linens Towel Brass Titanium nitride Manufacturing Matter Chemistry Bathing
404	CGH40006P 6 W, RF Power GaN HEMT Cree’s CGH40006P is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40006P, operating from a 28 volt rail, offers a general purpose, broadband solu Add to Reading List Source URL: www.cree.com Language: English - Date: 2014-07-08 11:55:04 Cree ANT Microwave Technology Telecommunications engineering DBm
405	1764 IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, VOL. 60, NO. 6, JUNE 2012 A Review of GaN on SiC High Electron-Mobility Power Transistors and MMICs Add to Reading List Source URL: www.cree.com Language: English - Date: 2014-05-08 10:01:10 Semiconductor devices Integrated circuits High electron mobility transistor Transistor Monolithic microwave integrated circuit Gallium nitride Field-effect transistor MOSFET MESFET Electronic engineering Electronics Technology
406	INFLUENCE OF STOICHIOMETRY ON ELECTROCHROMIC CERIUM-TITANIUM OXIDE COMPOUNDS K. von Rottkay, T. Richardson, M. Rubin, J. Slack Lawrence Berkeley National Laboratory, University Of California, Berkeley, CA 94720, USA, Kvo Add to Reading List Source URL: eetd.lbl.gov Language: English - Date: 2014-12-11 20:17:01 Ultraviolet radiation Inorganic compounds Thin-film optics Fused quartz Titanium dioxide Indium(III) oxide Gallium nitride Smart glass Chemistry Oxides Solar cells
407	RELIABILITY OF GaN/AlGaN HEMT MMIC TECHNOLOGY ON 100-mm 4H-SiC Donald A. Gajewski, Scott Sheppard, Tina McNulty, Jeff B. Barner, Jim Milligan and John Palmour Cree Inc., 4600 Silicon Dr., Durham, NC[removed]Don_Gajewski@Cr Add to Reading List Source URL: www.cree.com Language: English - Date: 2014-05-08 11:27:12 Semiconductor devices Semiconductor device fabrication Electronic design Light-emitting diode Lighting Transistor Gallium nitride Monolithic microwave integrated circuit Reliability Technology Electronics Chemistry
408	Zhong et al. Nanoscale Res Lett 2011, 6:36 http://www.nanoscalereslett.com/content[removed]NANO EXPRESS Open Access Add to Reading List Source URL: www.nanoscalereslett.com Language: English Materials science Emerging technologies Boron nitride Nitrides Carbon nanotube Nanoparticle Electron energy loss spectroscopy Nanostructure Chemistry Nanomaterials Matter
409	Nano-LEDs emit full visible spectrum of light Add to Reading List Source URL: phys.org Language: English - Date: 2015-03-03 07:00:11 Microscopy Light-emitting diode Lighting Gallium nitride Near-field scanning optical microscope Indium gallium nitride Near-field optics Microscope Optical microscope Chemistry Nitrides Optics
410	LETTERS PUBLISHED ONLINE: 22 JUNE 2014 \| DOI: [removed]NNANO[removed]Measurement of collective dynamical mass of Dirac fermions in graphene Hosang Yoon1, Carlos Forsythe2, Lei Wang3, Nikolaos Tombros2, Kenji Watanabe4, T Add to Reading List Source URL: ham.seas.harvard.edu Language: English - Date: 2014-08-12 14:13:44 Superhard materials Electrodynamics Emerging technologies Nanomaterials Graphene Quantum capacitance Boron nitride 2DEG Kinetic inductance Physics Chemistry Matter

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