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MOSIS
Results: 53

#	Item
31	CHANGES for the[removed]CORE DATA AND MISSOURI STUDENT INFORMATION SYSTEM (MOSIS) REFERENCE MANUAL Date Modified Page(s) Add to Reading List Source URL: dese.mo.gov Language: English - Date: 2014-03-11 15:46:51 Integrated circuits MOSIS Non-traditional student Education Knowledge Semiconductor device fabrication
32	Office of Data System Management Presentation Notes Add to Reading List Source URL: dese.mo.gov Language: English - Date: 2014-04-24 15:32:53 Semiconductor device fabrication MOSIS
33	Microsoft Word - LEPImmigTitleMOSISGuidance Add to Reading List Source URL: dese.mo.gov Language: English - Date: 2014-04-02 13:09:05 No Child Left Behind Act English as a foreign or second language MOSIS Education Title III Linguistic rights
34	CHANGES for the[removed]CORE DATA AND MISSOURI STUDENT INFORMATION SYSTEM (MOSIS) REFERENCE MANUAL Date Modified Page(s) Add to Reading List Source URL: dese.mo.gov Language: English - Date: 2014-08-21 15:23:24 Standards-based education Education Humanities 107th United States Congress Education policy No Child Left Behind Act
35	MISSOURI DEPARTMENT OF ELEMENTARY AND SECONDARY EDUCATION DIVISION OF LEARNING SERVICES - OFFICE OF DATA SYSTEM MANAGEMENT MOSIS and/or WEB SYSTEMS USER ID DELETE REQUEST SCHOOL DISTRICT/NONPUBLIC/INSTITUTION OF HIGHER E Add to Reading List Source URL: dese.mo.gov Language: English - Date: 2014-09-02 11:46:09 Electronics Email Technology Digital media
36	A Simplified Current-Voltage (I-V) Characteristics Model with Quantum Mechanical Effects for n-channel MOSFET Henok Abebe and Vance Tyree MOSIS service, USC Information Sciences Institute 4676 Admiralty Way, Marina del R Add to Reading List Source URL: www.cgu.edu Language: English - Date: 2006-06-15 18:37:14 Semiconductor devices Threshold voltage Transistors Electronic design MOSFET Polysilicon depletion effect Field-effect transistor Capacitance CMOS Electromagnetism Electrical engineering Electronic engineering
37	Modeling Quantum Effects on MOSFET Channel Surface Potential Henok Abebe MOSIS service, USC Information Sciences Institute 4676 Admiralty Way, Marina del Rey, CA 90292, USA and Ellis Cumberbatch Add to Reading List Source URL: www.cgu.edu Language: English - Date: 2006-06-15 18:36:35 Threshold voltage MOSFET Quantum electronics Gate oxide Quantum Hall effect Field-effect transistor Physics Electrical engineering Electromagnetism
38	SOCAMS 2004, Claremont, CA. Modeling Quantum Effects on Current/Voltage Characteristics of a MOSFET Transistor Henok Abebe, USC Information Sciences Institute, MOSIS Service, Ellis Cumberbatch, School of Mathematical Sci Add to Reading List Source URL: www.cgu.edu Language: English - Date: 2006-06-15 18:36:35 Electromagnetism Semiconductor devices Field-effect transistor Electronic engineering Power electronics Transistors Threshold voltage Channel length modulation Electrical engineering Technology MOSFET
39	February 2, 2009 IMPORTANT NOTIFICATION TO: English Language Learner (ELL) Coordinator Add to Reading List Source URL: dese.mo.gov Language: English - Date: 2014-04-09 09:15:48 Linguistic rights Title III English as a foreign or second language Education in the United States Bilingual education MOSIS English-language learner Ell Language proficiency Education English-language education Language education
40	June Cycle The June Cycle Core Data and MOSIS submissions are due June 30. Core Data end-of-year data are reported on Screens 07 - Library Media Center, 08 - Attendance Center, 10 - School Calendar, 18A - Educator Evalua Add to Reading List Source URL: dese.mo.gov Language: English - Date: 2014-04-10 09:58:33

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