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MOSFET
Results: 875

#	Item
621	Compact model for ultra-short channel four-terminal DG MOSFETs for exploring circuit characteristics T. Nakagawa, T. Sekigawa, T. Tsutsumi, M. Hioki, E. Suzuki, and H. Koike Electroinformatics Group, Nanoelectronics Res Add to Reading List Source URL: www.nsti.org Language: English* - Date: 2005-05-23 13:18:26 Electrical engineering Transistor Short-channel effect Field-effect transistor Multigate device Depletion region Power electronics Power MOSFET Semiconductors Technology MOSFET Electronic engineering
622	Advanced MOSFET Modeling for RF IC Design Yuhua Cheng Yuhua Cheng MTT/RFIC Workshop 2003 Add to Reading List Source URL: www.nsti.org Language: English - Date: 2010-03-19 15:40:02 Electronic design MOSFET CMOS NQS Small-signal model Self-aligned gate Large-signal model Electronic engineering Electrical engineering Electronics
623	WCM-Nanotech2012 11th Workshop on Compact Modeling – Nanotech Conference Santa Clara, Clara California California, USA Add to Reading List Source URL: www.techconnectworld.com Language: English - Date: 2012-11-12 14:58:08 MOSFET Transconductance Threshold voltage Temperature Electromagnetism Engineering Physics Heat transfer Thermodynamics
624	Floating Gate Devices: Operation and Compact Modeling Paolo Pavan(1), Luca Larcher(1) and Andrea MarmirolI[removed]Università di Modena e Reggio Emilia, Via Fogliani, 1 – 42100 Reggio Emilia (Italy) - pavan.paolo@unimo Add to Reading List Source URL: www.nsti.org Language: English - Date: 2010-03-19 15:39:01 Analog circuits Physical quantities Floating Gate MOSFET Threshold voltage Current source Capacitor Capacitance Hot carrier injection SPICE Electromagnetism Physics Electronic engineering
625	All-Region MOS Model of Mismatch due to Random Dopant Placement Hamilton Klimach Carlos Galup-Montoro Márcio Cherem Schneider Add to Reading List Source URL: www.nsti.org Language: English - Date: 2005-05-23 13:16:36 Threshold voltage Electrical engineering MOSFET Dopant
626	Microsoft PowerPoint - WCM2003-invited talk-1.ppt Add to Reading List Source URL: www.nsti.org Language: English - Date: 2010-03-19 15:29:19 MOSFET Capacitor Technology Physics Capacitance Electricity
627	1,2, Yuan Taur3 3, Chung Hsun Lin2 2, Mansun Chan1,2 Jin He22, Xuemei Xi, Ali Niknejad22, and Chenming Hu44 Add to Reading List Source URL: www.nsti.org Language: English - Date: 2010-03-19 15:27:40 Design Quality Indicator BSIM MOSFET University of California Berkeley Berkeley California San Francisco Bay Area Chenming Hu
628	SCP and C-V charge vs. process condition in thermal oxide Add to Reading List Source URL: www.nsti.org Language: English - Date: 2010-03-19 15:18:33 MOSFET Golden ratio
629	WCM-MSM2003 Workshop on Compact Modeling The 6th International Conference on Modeling and Simulation of Microsystems (San Francisco, California, USA. February 25–27, 2003) Overview Add to Reading List Source URL: www.nsti.org Language: English - Date: 2010-03-19 15:24:04 Chenming Hu MOSFET Transistor model Compact Software Transistor Threshold voltage Bipolar junction transistor Silicon-germanium Multigate device Electrical engineering Electronic engineering Electromagnetism
630	MSM2005 – Workshop on Compact Modeling (WCM2005) Compact Modeling of Threshold Voltage in Double-Gate MOSFET including quantum mechanical and short channel effects K. Nehari, D. Munteanu, J.L. Autran,, S. Harriso Add to Reading List Source URL: www.nsti.org Language: English* - Date: 2005-05-23 13:16:28 Field-effect transistor MOSFET Threshold voltage Short-channel effect

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