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GeSbTe
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1	www.nature.com/scientificreports OPEN received: 15 April 2016 accepted: 06 June 2016 Add to Reading List Source URL: www.pdi-berlin.de Language: English - Date: 2016-06-29 18:15:09 Chemistry Raman scattering Optics Physics Fiber-optic communications Raman spectroscopy Scattering Glass physics GeSbTe Phonon Phase-change memory Infrared spectroscopy
2	7th International Workshop on Characterization and Modeling of Memory devices Sept 29th- 30th 2016 \| Università degli Studi di Milano - Bicocca Building U6 \| Room M. Martini \| Floor -1 \| Piazza dell’Ateneo Nuovo 1 \| M Add to Reading List Source URL: www.fondazionepolitecnico.it Language: English - Date: 2016-05-24 06:07:04 Emerging technologies Non-volatile memory Ferroelectricity Resistive random-access memory Magnetoresistive random-access memory GeSbTe Potential applications of graphene Thermal conduction University of Milan
3	● Х и мия -мет а ллург ия ғ ылымда ры REFERENCES 1. Komarov L.F., Poletayeva M.A. Ispolzovanie vody na predpriyatiyakh i ochistka stochnykh vod v razlichnykh otraslyakh promyshlennosti: Uchebno Add to Reading List Source URL: vestnik.kazntu.kz Language: English - Date: 2015-04-08 06:33:25 Alloys Chalcogenides DVD GeSbTe Raman scattering Sputtering Raman spectroscopy Glass Amorphous solid Chemistry Matter Materials science
4	Patterning of GST for Non volatile Phase-Change Memory Applications B. Salhi1, T. Chevolleau1, C. Vizioz2, C. Jahan2, S. Maitrejean2, C. Vallee1, T. Baron1, and O. Joubert1 1LTM Add to Reading List Source URL: www.leti.fr Language: English - Date: 2012-05-24 09:20:21 Technology Physics Etching Plasma etching Plasma Gete GeSbTe Semiconductor device fabrication Materials science Microtechnology
5	Patterning of GST for Non volatile Phase-Change Memory Applications B. Salhi1, T. Chevolleau1, C. Vizioz2, C. Jahan2, S. Maitrejean2, C. Vallee1, T. Baron1, and O. Joubert1 1LTM Add to Reading List Source URL: www-leti.cea.fr Language: English - Date: 2012-05-24 09:20:21 Technology Physics Etching Plasma etching Plasma Gete GeSbTe Semiconductor device fabrication Materials science Microtechnology
6	Patterning of GST for Non volatile Phase-Change Memory Applications B. Salhi1, T. Chevolleau1, C. Vizioz2, C. Jahan2, S. Maitrejean2, C. Vallee1, T. Baron1, and O. Joubert1 1LTM Add to Reading List Source URL: www-leti.cea.fr Language: English - Date: 2012-05-24 09:20:21 Technology Physics Etching Plasma etching Plasma Gete GeSbTe Semiconductor device fabrication Materials science Microtechnology
7 $Matter / Diffraction / Amorphous solids / Phases of matter / Powder diffraction / Crystal / Reverse Monte Carlo / Melting / GeSbTe / Physics / Chemistry / Phase transitions$	October 17, 2006 Japan Synchrotron Radiation Research Institute (JASRI) Japan Science and Technology Agency (JST) RIKEN Matsushita Electric Industrial Co., Ltd. Tsukuba University Add to Reading List Source URL: www.riken.jp Language: English - Date: 2013-05-19 20:32:11 Matter Diffraction Amorphous solids Phases of matter Powder diffraction Crystal Reverse Monte Carlo Melting GeSbTe Physics Chemistry Phase transitions
8	EPCOS2007 Glass Transition and Crystallization in Phase Change Materials Add to Reading List Source URL: www.epcos.org Language: English* - Date: 2011-09-07 11:22:56 Chalcogenides Optical materials Condensed matter physics Glass transition GeSbTe Glass Crystallization Nucleation Differential scanning calorimetry Chemistry Materials science Phase transitions
9	EPCOS2008 Recent Progress of Phase Change Random Access Memory (PRAM) Add to Reading List Source URL: www.epcos.org Language: English* - Date: 2011-09-07 11:24:05 Computer memory Phase-change memory GeSbTe Influenza Emerging technologies Non-volatile memory Chemistry
10	EPCOS2007 - bez-pell - final Add to Reading List Source URL: www.epcos.org Language: English - Date: 2011-09-07 11:21:28 Emerging technologies Computing Phase-change memory Flash memory 45 nanometer 32 nanometer Battery GeSbTe Computer memory Non-volatile memory Computer hardware

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