Dopant

Results: 74



#Item
11SISPAD 2012, September 5-7, 2012, Denver, CO, USA Simulating the Random Dopant Effect: A New ThreeDimensional Monte Carlo Approach Kangliang Wei, Xiaoyan Liu*, Gang Du Egley James

SISPAD 2012, September 5-7, 2012, Denver, CO, USA Simulating the Random Dopant Effect: A New ThreeDimensional Monte Carlo Approach Kangliang Wei, Xiaoyan Liu*, Gang Du Egley James

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Source URL: in4.iue.tuwien.ac.at

Language: English - Date: 2013-02-12 08:39:10
    12SISPAD 2012, September 5-7, 2012, Denver, CO, USA Analytical Model for the Threshold Voltage Variability due to Random Dopant Fluctuations in Junctionless FETs Antonio Gnudi, Susanna Reggiani, Elena Gnani, Giorgio Bacca

    SISPAD 2012, September 5-7, 2012, Denver, CO, USA Analytical Model for the Threshold Voltage Variability due to Random Dopant Fluctuations in Junctionless FETs Antonio Gnudi, Susanna Reggiani, Elena Gnani, Giorgio Bacca

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    Source URL: in4.iue.tuwien.ac.at

    Language: English - Date: 2013-02-12 08:39:13
      13SISPAD 2012, September 5-7, 2012, Denver, CO, USA A TCAD Study of Substrate Dopant for Extremely Thin SOI MOSFETs with Ultra-Thin Buried Oxide Hao WU, Xiaodong TONG, Miao XU, Weiping XIAO, Binneng WU, Huilong ZHU, Qingq

      SISPAD 2012, September 5-7, 2012, Denver, CO, USA A TCAD Study of Substrate Dopant for Extremely Thin SOI MOSFETs with Ultra-Thin Buried Oxide Hao WU, Xiaodong TONG, Miao XU, Weiping XIAO, Binneng WU, Huilong ZHU, Qingq

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      Source URL: in4.iue.tuwien.ac.at

      Language: English - Date: 2013-02-12 08:39:03
        14SISPAD 2012, September 5-7, 2012, Denver, CO, USA 3D simulations of random dopant induced threshold voltage variability in inversion–mode In0.53Ga0.47As GAA MOSFETs N. Seoane, A. Garcia–Loureiro, E. Comesa˜na, R. V

        SISPAD 2012, September 5-7, 2012, Denver, CO, USA 3D simulations of random dopant induced threshold voltage variability in inversion–mode In0.53Ga0.47As GAA MOSFETs N. Seoane, A. Garcia–Loureiro, E. Comesa˜na, R. V

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        Source URL: in4.iue.tuwien.ac.at

        Language: English - Date: 2013-02-12 08:39:09
          15    EUROPEAN ORGANIZATION FOR NUCLEAR RESEARCH Addendum to the ISOLDE and Neutron Time-of-Flight Committee

              EUROPEAN ORGANIZATION FOR NUCLEAR RESEARCH Addendum to the ISOLDE and Neutron Time-of-Flight Committee

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          Source URL: joao.web.cern.ch

          Language: English - Date: 2014-03-26 16:28:59
          16N-type semiconductor N-type semiconductor N-type semiconductors are a type of extrinsic semiconductor where the dopant atoms are capable of providing extra conduction electrons to the host material (e.g. phosphorus in s

          N-type semiconductor N-type semiconductor N-type semiconductors are a type of extrinsic semiconductor where the dopant atoms are capable of providing extra conduction electrons to the host material (e.g. phosphorus in s

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          Source URL: www.saylor.org

          Language: English - Date: 2013-03-20 16:12:01
            17SIMS Analytics of Dopants, Impurities and Matrix Compositions Main Applications • Quantification of dopants and impurities 

            SIMS Analytics of Dopants, Impurities and Matrix Compositions Main Applications • Quantification of dopants and impurities 

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            Source URL: www.rtg-berlin.de

            Language: English - Date: 2014-07-30 11:10:47
            18CMDD1 - High Power Diode Pumped 2 µm Laser Operation of Tm:Lu2O3

            CMDD1 - High Power Diode Pumped 2 µm Laser Operation of Tm:Lu2O3

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            Source URL: www.mirsurg.eu

            Language: English - Date: 2012-02-07 03:02:42
            19Journal of Crystal Growth–117 Numerical investigation of the influence of EM-fields on fluid motion and resistivity distribution during floating-zone growth of large silicon single crystals a

            Journal of Crystal Growth–117 Numerical investigation of the influence of EM-fields on fluid motion and resistivity distribution during floating-zone growth of large silicon single crystals a

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            Source URL: www.mhd-crystal.lv

            Language: English - Date: 2003-02-27 08:19:21
            20Drift and Diffusion of carriers In an electric field, the current of charged carriers is controlled by both

            Drift and Diffusion of carriers In an electric field, the current of charged carriers is controlled by both

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            Source URL: nanofab.caltech.edu

            Language: English - Date: 2013-10-01 19:04:08