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Semiconductors / Semiconductor device fabrication / Transistors / High-k dielectric / Leakage / Equivalent oxide thickness / SILC / Gate dielectric / Capacitor / Electromagnetism / Electrical engineering / Electronic engineering
Date: 2011-06-08 19:42:34
Semiconductors
Semiconductor device fabrication
Transistors
High-k dielectric
Leakage
Equivalent oxide thickness
SILC
Gate dielectric
Capacitor
Electromagnetism
Electrical engineering
Electronic engineering

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