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Power electronics / Semiconductor devices / Insulated-gate bipolar transistor / Transistor / Bipolar junction transistor


A CRITICAL ANALYSIS OF IGBT GEOMETRIES, WITH THE INTENTION OF MITIGATING UNDESIRABLE DESTRUCTION CAUSED BY FAULT SCENARIOS OF AN ADVERSE NATURE G. E. Leyh, SLAC, Menlo Park CAAbstract Megawa
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Document Date: 2003-05-07 14:01:39


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File Size: 345,67 KB

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