<--- Back to Details
First PageDocument Content
Richland /  Washington / Tri-Cities /  Washington / United States Department of Energy National Laboratories / Transition metal oxides / Materials science / Epitaxy / Environmental Molecular Sciences Laboratory / Doping / Pacific Northwest National Laboratory / Chemistry / Semiconductor device fabrication / Matter
Date: 2015-03-24 18:37:56
Richland
Washington
Tri-Cities
Washington
United States Department of Energy National Laboratories
Transition metal oxides
Materials science
Epitaxy
Environmental Molecular Sciences Laboratory
Doping
Pacific Northwest National Laboratory
Chemistry
Semiconductor device fabrication
Matter

Structure-property Relationships in Pure and Doped Epitaxial Tungsten Trioxide Thin Films

Add to Reading List

Source URL: www.emsl.pnnl.gov

Download Document from Source Website

File Size: 136,93 KB

Share Document on Facebook

Similar Documents

Electronic phase transitions and space charge doping in 2D materials Abhay Shukla Institut de Minéralogie, de Physique des Matériaux et de Cosmoschimie CNRS UMR 7590, Université Pierre et Marie Curie, Paris 6

DocID: 1voRA - View Document

In-situ Gallium-doping for forming p+ Germanium-Tin and application in Germanium-Tin PIN photodetector Wei Wang,1 Saumitra Vajandar,2 Sin Leng Lim,2 Yuan Dong,1 Vijay Richard D’Costa,1 Thomas Osipowicz,2 Eng Soon Tok,2

DocID: 1vnU6 - View Document

THE WORLD ANTI-DOPING CODE INTERNATIONAL STANDARD PROHIBITED LIST

DocID: 1vijk - View Document

有機半導体関連セミナー 講師:Prof. Antoine Kahn (Princeton University, USA) 題目:Impact of Doping-Induced Trap Filling on Charge Carrier Mobilityand Device Performance 日時:2013 年 1 月 23 日(

DocID: 1vbuQ - View Document

Will field effect experiments permit to circumvent the drawbacks of chemical doping in correlated electron systems? A. Dooglav I. Mukhamedshin J. Bobroff

DocID: 1v5Ul - View Document