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Semiconductor devices / Field-effect transistor / Contact resistance / Threshold voltage / Floating Gate MOSFET / Transistor / JFET / Depletion and enhancement modes / Self-aligned gate / Electrical engineering / Technology / Electromagnetism


2386 IEEE TRANSACTIONS ON ELECTRON DEVICES. VOL. 36. NO. II. NOVEMBER 1989 A Floating-Gate Transmission-Line Model Technique for Measuring Source Resistance in Heterostructure
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Document Date: 2013-04-16 14:15:16

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