2386 IEEE TRANSACTIONS ON ELECTRON DEVICES. VOL. 36. NO. II. NOVEMBER 1989 A Floating-Gate Transmission-Line Model Technique for Measuring Source Resistance in Heterostructure

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Date: 2013-04-16 14:15:16 Semiconductor devices Field-effect transistor Contact resistance Threshold voltage Floating Gate MOSFET Transistor JFET Depletion and enhancement modes Self-aligned gate Electrical engineering Technology Electromagnetism		2386 IEEE TRANSACTIONS ON ELECTRON DEVICES. VOL. 36. NO. II. NOVEMBER 1989 A Floating-Gate Transmission-Line Model Technique for Measuring Source Resistance in Heterostructure Add to Reading List Source URL: www-mtl.mit.edu Download Document from Source Website File Size: 762,62 KB Share Document on Facebook

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