NANO LETTERS Electrostatic Control of Ions and Molecules in Nanofluidic Transistors

Source URL: nanowires.berkeley.edu

US6M1 US6M1 Transistors 4V+2.5V Drive Nch+Nch MOSFET US6M1

Source URL: hands.com

80 Technology focus: InGaAs MOSFETs High-pressure anneal for indium gallium arsenide transistors Process reduces interface and border traps in aluminium oxide/hafnium dioxide

Source URL: www.semiconductor-today.com

Letter pubs.acs.org/NanoLett Ballistic InAs Nanowire Transistors Steven Chuang,†,∥ Qun Gao,‡ Rehan Kapadia,†,∥ Alexandra C. Ford,†,§,∥ Jing Guo,‡ and Ali Javey*,†,§,∥ †

Source URL: nano.eecs.berkeley.edu

Letter pubs.acs.org/NanoLett Self-Aligned, Extremely High Frequency III−V Metal-OxideSemiconductor Field-Effect Transistors on Rigid and Flexible Substrates Chuan Wang,†,‡,§ Jun-Chau Chien,† Hui Fang,†,‡,§

Source URL: nano.eecs.berkeley.edu

1 Space-filling three dimensional semiconductor structures Stacks of epitaxial semiconductor layers form the basis of a wide variety of modern devices such as high electron mobility transistors, high efficiency solar cel

Source URL: news.phys.ethz.ch

• Thin film deposition
• Crystals
• Crystallography
• Antonie van Leeuwenhoek
• Microscopy
• Scanning electron microscope
• Electron microscope
• Epitaxy
• Germanium
• Single crystal
• Solar cell

504 IEEE ELECTRON DEVICE LETTERS, VOL. 33, NO. 4, APRIL 2012 Ultrathin-Body High-Mobility InAsSb-on-Insulator Field-Effect Transistors

Source URL: nano.eecs.berkeley.edu

POLE-ZERO is a 4-pole (24dB/octave) low pass Voltage Controlled Filter (VCF) utilizing MOSFET transistors. MOSFETs are known for their soft, vacuum tube like distortion when overdriven. POLE-ZERO is designed to exploit t

Source URL: www.wmdevices.com

318 Retraction Note Retraction Note The title ‘A New Approach to the Characteristics and Short-Channel Effects of DoubleGate Carbon Nanotube Field-Effect Transistors using MATLAB: A Numerical Study’ by

Source URL: www.znaturforsch.com

THz detection with field-effect transistors In terms of CW THz detectors, the most efficient and fast room-temperature operating detectors so far are Schottky diodes. They are very well engineered but hard to further imp

Source URL: www.tsys.tu-darmstadt.de