<--- Back to Details
First PageDocument Content
Integrated circuits / Semiconductor devices / Logic families / Gallium arsenide / MESFET / Monolithic microwave integrated circuit / Transistor / Silicon-germanium / High electron mobility transistor / Electronics / Electronic engineering / Chemistry
Date: 2014-10-29 09:43:16
Integrated circuits
Semiconductor devices
Logic families
Gallium arsenide
MESFET
Monolithic microwave integrated circuit
Transistor
Silicon-germanium
High electron mobility transistor
Electronics
Electronic engineering
Chemistry

ECE Executive Committee Meeting

Add to Reading List

Source URL: www.ece.utoronto.ca

Download Document from Source Website

File Size: 2,69 MB

Share Document on Facebook

Similar Documents

Quantum Communications using Semiconductor Devices Andrew Shields Toshiba Research Europe Ltd 208 Science Park, Milton Road, Cambridge CB40GZ. UK www.quantum.toshiba.co.uk *

DocID: 1vqum - View Document

Dear Colleagues: Semiconductor Research Corporation (SRC) Global Research Collaboration (GRC) is soliciting White Papers in the thrust area of Logic and Memory Devices. The white paper, limited to two pages and addressin

DocID: 1uNQx - View Document

Study of vacancy-type defects after post-growth annealing of undoped GaAs V. Bondarenko, K.Petters and R. Krause-Rehberg Introduction • SI GaAs  one of the most common materials for semiconductor devices

DocID: 1tQeR - View Document

    E6: Optoelectronics Optoelectronics research area includes semiconductor based optoelectronic devices and materials as well

DocID: 1sFF2 - View Document

1 VI. Semiconductor Devices and Microelectronics 1. Bipolar Transistors Bipolar transistors in amplifiers 2. Field Effect Transistors

DocID: 1sy2o - View Document