Boston / New York / Berlin / Pittsburgh / Erlangen / Glasgow / London / San Diego / Brussels / Braunschweig / /
Company
Matsuda / Heterogeneous Silicon-Based Films / PVD / McGraw-Hill / Heterogeneous Silicon Thin Films / RBS / Philips / Shimizu / Imperial College Press / Thin Solid Films / Corning / /
Country
Germany / /
Currency
USD / /
Facility
Central Facility / University of Erlangen / /
IndustryTerm
large-area electronics / energy barrier / gas flow rates / interfacial energy / gas-plasma phase / enthalpy and free energy / free energy / silicon gas-phase component / hydrogen-rich gas phase / chemical reaction leads / surface energy / reaction products / chemical reaction / free-energy gain / charge carrier mobility / chemical potentials / chemical vapor deposition techniques / energy / electron-cyclotron resonance chemical vapor deposition / energy gain / interface energy / electronic devices / chemical-vapor deposition / material systems / chemical-kinetic models / gas phase first leads / free-energy barrier / overall chemical reaction / activation energy / gas-solid phase transition / gas phase / /
Organization
University of Erlangen / International Union of Pure and Applied Physics / Materials Research Society / W. Fuhs Hahn-Meitner-Institut / Fraunhofer-Institut fu¨r Schicht-und Oberfla¨chentechnik / /
Person
J. B. Boyce / Bt / James / D. E. Prokof’ev / V / P. Brogueira / V / M. Ito / V / /
PHYSICAL REVIEW B, VOLUME 64, [removed]Amorphous-crystalline phase transition during the growth of thin films: