J. J. M. Halls D. D. / V comP / D. D. D. C. / Au Ag / Crystalline Ill-V Semiconductors / A. Abkowitz S. A. / Crystalline III-V Semiconductors / Thin Solid Films / /
Country
United States / /
Currency
pence / / /
Facility
Washington University / Stable URL / /
IndustryTerm
metal functions / metal / thinfilm devices / Energy dispersive x-ray spectroscopy / chemical-vapor-deposition / well-studied chemical reactions / reaction solution / energy conversion efficiency / toluene solution / organometallic chemical vapor deposition / liquid metal / internal carrier collection efficiency / assisted alkane lowest liquid-solid interfacial energy / englneerlng applications / thick-film devices / oil-bath heating / carrier recombination / /
Organization
Washington University / St. Louis / American Association for the Advancement of Science / Physics Department / Department of Energy / Federal Trade Commission / Department of Chemistry / /
Person
Kathleen M. Hickman / Timothy J. Trentler / Patrick C. Gibbons / Subhash C. Goel / A. Chamberlain / William E. Buhro / Ann M. Viano / / /
ProvinceOrState
Missouri / New York / /
Technology
semiconductor / Adam / semiconductors / x-ray / crystallization / spectroscopy / recombination / chemical vapor deposition / /
Solution-Liquid-Solid Growth of Crystalline III-V Semiconductors: An Analogy to Vapor-Liquid-Solid Growth Timothy J. Trentler; Kathleen M. Hickman; Subhash C. Goel; Ann M. Viano; Patrick C. Gibbons;